LPP-EUV light source system based on collosol jet target

A technology of LPP-EUV and sol jet target, applied in the field of LPP-EUV light source system, can solve the problems of increasing the difficulty of LPP-EUV light source control and maintenance, unfavorable efficient and stable operation of EUV lithography system, etc., so as to improve the operation stability Effect

Active Publication Date: 2015-09-16
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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Problems solved by technology

This undoubtedly increases the difficulty of the control and maintenance of the LPP-EUV light so

Method used

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  • LPP-EUV light source system based on collosol jet target
  • LPP-EUV light source system based on collosol jet target
  • LPP-EUV light source system based on collosol jet target

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[0016] The following examples and drawings illustrate the present invention further, but the protection scope of the present invention should not be limited by this.

[0017] See first figure 1 , figure 1 It is a schematic diagram of the structure of the LPP-EUV light source system based on the sol jet target of the present invention. by figure 1 It can be seen that the composition of the LPP-EUV light source system based on the sol jet target of the present invention includes a sol generating device 1, a sol jet-circulating device 2, a pump laser source 3 and an LPP-EUV generating device 4. The sol M1 is generated by the sol generating device 1, and the sol jet target is formed in the LPP-EUV generating device 4 through the sol jet-circulating device 2. The pump laser source 3 outputs the pump laser L1, enters the LPP-EUV generating device 4, and then acts on the sol jet target.

[0018] See figure 2 , figure 2 It is a schematic diagram of the structure of the sol generating de...

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Abstract

An LPP-EUV light source system based on a collosol jet target comprises a collosol generating apparatus, a collosol jetting and cycling apparatus, an LPP-EUV generating apparatus and a pump laser source. Firstly, the collosol generating apparatus generates collosol, and then, the collosol jet target is formed in the LPP-EUV generating apparatus by using the collosol cyclic jetting apparatus. The pump laser source outputs pump laser which acts on the collosol jet target after entering the LPP-EUV generating apparatus. The present invention enhances the reliability and stability of the LPP-EUV light source based on the collosol jet target and ensures the efficient and stable operation of an EUV lithography system.

Description

technical field [0001] The invention relates to a laser plasma type extreme ultraviolet (LPP-EUV) lithography light source, in particular to an LPP-EUV light source system based on a sol jet target. Background technique [0002] With the rapid development of the electronic information industry, the level of semiconductor manufacturing technology has been greatly improved, and the photolithography technology is moving towards the resolution node of 14nm or even below 10nm. The wavelength of lithography light source has been developed from 436nm (Hg-g), 365nm (Hg-i) to 248nm (KrF), 193nm (ArF) and 157nm (F2), and is moving to 13.5nm (EUV) or even 6.X nm and other more short wavelength development. According to the generation method of the EUV light source, its types mainly include synchrotron radiation (SR) type light source, discharge plasma (DPP) type light source and laser plasma (LPP) type light source, etc. The SR-EUV light source generates EUV radiation by changing the...

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Application Information

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IPC IPC(8): G03F7/20
Inventor 张宗昕冷雨欣王成赵全忠王关德程欣李儒新
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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