Non-volatile field effect transistor storage device without floating gate

Abstract

The invention relates to the technical field of storage, in particular to non-volatile field effect transistor storage device without a floating gate. The non-volatile field effect transistor storage device comprises a SrTiO3 substrate, a LaAlO3 thin film arranged on the SrTiO3 substrate and two metal electrodes which are arranged on the SrTiO3 substrate and pass through the LaAlO3 thin film respectively, wherein the two metal electrodes serve as a source electrode S and a drain electrode D respectively; a metal electrode as a grid electrode is arranged on the LaAlO3 thin film; and two-dimensional electron gas is formed between the interface of the SrTiO3 substrate and the LaAlO3 thin film. The LaAlO3 thin film has the functions of an insulating layer and a floating gate layer in a flash memory device structure, the floating gate layer for storing electric charges does not need to be used, the structure is simpler, the device preparation technology is simpler, and the erasing speed can be greatly improved.

Description

technical field [0001] The invention relates to the field of storage technology, in particular to a non-volatile non-floating gate transistor field effect transistor memory. Background technique [0002] Non-volatile memory has the advantage that the logic data stored in the device can still be stored for a long time when there is no power supply. It is one of the most important hardware in digital information technology and has attracted the attention of scholars and enterprises. [0003] At present, the mainstream non-volatile memory in the market is flash memory based on the charge storage mechanism. non-volatile storage. However, this way of injecting and releasing hot electrons needs to apply a high voltage to the gate and channel layers, which will destroy the insulation degree of the insulating layer. Therefore, the number of erasing and writing times of flash memory is limited, and the erasing and writing speed is slow. After a certain number of erasing and writing...

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Problems solved by technology

However, this method of hot electron injection and release requires high voltages to be applied to the gate and channel layers, which will destroy the insulation of the insulating layer.

Therefore, the number of erasing and writing of flash memory is limited, and the erasing and writing speed is slow. After a certain number of erasing and writing, the leakage of the insulating layer becomes serious, and the charge cannot be effectively stored, so that the device can no longer work normally.

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