Preparation method of quantum-dot five-junction solar cell

A technology of solar cells and quantum dots, applied in the field of solar cells, can solve problems affecting electron and hole transport, and achieve the effect of improving photoelectric conversion efficiency and regular arrangement

Active Publication Date: 2015-09-16
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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Problems solved by technology

However, if the number of single cell junctions contained in the cascaded solar cell is large, the defects between the connection interfaces of each junction solar cell will increase, thereby affecting the transport of electrons and holes in the cascaded solar cell

Method used

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  • Preparation method of quantum-dot five-junction solar cell
  • Preparation method of quantum-dot five-junction solar cell
  • Preparation method of quantum-dot five-junction solar cell

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Embodiment Construction

[0045] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0046] like figure 1 As shown, a preparation method of a quantum dot five-junction solar cell of the present invention includes the following steps:

[0047] (a) Forward growth of InP two-junction solar cells by MOCVD epitaxy;

[0048] (b) Reverse growth of GaAs triple junction solar cells by MOCVD epitaxy;

[0049] (c) realizing the bonding of the InP two-junction solar cell and the GaAs three-junction solar cell through a semiconductor direct bonding process;

[0050] (d) Complete the lift-off of the sacrificial layer by a selective etching process.

[0051] The sacrificial layers are the GaInP etch stop layer 19 , the GaAs buffer layer 20 and the GaAs substrate 21 .

[0052] like figure 2 As shown, an InP two-junction solar cell based on epitaxial forward growth includes an InP bonding contact layer 13, a fourth junction In x Ga 1...

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Abstract

The invention, which relates to the solar cell field, mainly discloses a preparation method of a quantum-dot five-junction solar cell. An InP two-junction solar cell is prepared based on epitaxial forward growth by using an MOCVD technology and a GaAs three-junction solar cell is prepared based on epitaxial inverse growth by using the MOCVD technology; and the InP two-junction solar cell and the GaAs three-junction solar cell are bonded by using a semiconductor direct bonding process to form a quantum-dot five-junction solar cell. The prepared cell contains a GaAs cap layer, a first-junction AlxGa(1-x)In0.5P cell, a first tunnel junction, a second-node AlxGa(1-x)As cell, a second tunnel junction, a third-junction GaAs cell, a third tunnel junction, a bonding contact layer, a fourth-junction InxGa(1-x)ASyP(1-y) cell, a fourth tunnel junction, a fifth-junction InxGa(1-x)As cell, an InP buffer layer, and an InP substrate. The preparation method has the following beneficial effects: the occurrence probability of raw material wasting caused by the epitaxial growth misoperation during the cell preparation process can be reduced. Besides, the semiconductor direct bonding process can be operated simply and easily during the cell preparation method and the cell production efficiency is improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a preparation method of a quantum dot five-junction solar cell. Background technique [0002] At present, due to the excessive abuse of traditional energy sources, the ecological environment has been severely damaged, and people's awareness of environmental protection is becoming stronger and stronger. At the same time, people need to seek cleaner new energy sources to replace traditional energy sources, so as to reduce the pollution level of the exhaust gas generated by traditional energy sources to the atmosphere. [0003] Since solar energy is an inexhaustible clean energy, the development of the photovoltaic industry has been paid great attention now. This requires the manufacture of solar cells to be industrialized. Industrial production needs to consider issues such as production costs. Especially in order to make full use of solar radiation energy in various wavelength bands,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0304H01L31/18H01L31/0236
CPCH01L31/02363H01L31/03046H01L31/1844Y02E10/544Y02P70/50
Inventor 高鹏薛超张无迪刘如彬肖志斌孙强
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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