Semiconductor component and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of large area of metal oxide semiconductor field-effect transistors, etc., to reduce size and use more Efficiency and area reduction effect
Active Publication Date: 2015-09-23
REALTEK SEMICON CORP
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Problems solved by technology
The disadvantage of this electrostatic discharge protection circuit is that the area occupied by the metal oxide semiconductor field effect transistor is too large, and another electrostatic discharge protection circuit composed of diodes also has the same problem
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Embodiment ）
[0061] Step S1470: forming an insulating layer on the substrate, the first groove structure and the second groove structure. In one embodiment, the insulating layer is a common oxide in semiconductor technology, such as silicon dioxide, silicon nitride (Si3N4), or oxynitride (Oxynitride), but not limited to this. This insulating layer can be divided into a first insulating layer in the first groove-like structure and a second insulating layer in the second groove-like structure. The first insulating layer covers the first doped layer, and if there is formed in step S1450 Second doped layer, the second insulating layer will cover the second doped layer (such as the embodiment of the semiconductor device 200), otherwise the second insulating layer will cover the sidewalls and / or bottom surface of the second trench structure (such as semiconductor Embodiments of element 500 and semiconductor element 600);
[0062] Step S1480: forming a conductive layer on the substrate, the first g...
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The invention discloses a semiconductor component and a manufacturing method thereof. The semiconductor component comprises a substrate, a first trough-shaped structure and a second trough-shaped structure. The first trough-shaped structure is arranged on the substrate and comprises a first conductive layer, a first doped layer and a first insulating layer. The first insulating layer is arranged between the first conductive layer and the first doped layer. The second trough-shaped structure is arranged on the substrate and is separated from the first trough-shaped structure by one separating part of the substrate. Furthermore the second trough-shaped structure comprises a second conductive layer and a second insulating layer. The first doped layer is provided with a first contact. The separating part of the substrate is provided with a second contact. The second conductive layer is provided with a third contact, wherein a resistor is formed at the separating part of the substrate and is coupled between the first contact and the second contact. The substrate, the second insulating layer and the second conductive layer form a capacitor which is coupled between the second contact and the third contact. According to the semiconductor component and the manufacturing method, the area of the semiconductor component can be reduced.
Description
Technical field [0001] The present invention relates to a semiconductor element and a manufacturing method thereof, and in particular to a semiconductor element and a manufacturing method thereof that use a three-dimensional semiconductor element to implement an electrostatic discharge (ESD) protection circuit to save circuit area. Background technique [0002] Electrostatic discharge protection is a very important topic in the semiconductor field. Especially as the semiconductor process becomes more sophisticated and the line width is shrinking, integrated circuits (IC) are increasingly threatened by various electrostatic discharges. It is getting bigger and bigger, such as from the human-body model (Human-Body Model, HBM), machine model (Machine Model, MM) and component charging mode (Charged-Device Model, CDM) and other threats. See figure 1 , Which is a circuit diagram of a well-known electrostatic discharge protection circuit. As shown in the figure, the main circuit 150 in...
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IPC IPC(8): H01L23/60H01L21/027
Inventor 颜孝璁简育生叶达勋
Owner REALTEK SEMICON CORP