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Post-processing method of dielectric film, interconnection layer and semiconductor device

A dielectric film and oxidation treatment technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as device failure, device damage, and device performance degradation, and achieve the effect of improving performance and reducing defects

Active Publication Date: 2015-09-30
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above-mentioned high-temperature annealing will cause damage to the device, which will lead to a decrease in the performance of the device, and even cause the failure of the device.

Method used

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  • Post-processing method of dielectric film, interconnection layer and semiconductor device
  • Post-processing method of dielectric film, interconnection layer and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] This embodiment provides a post-processing method for a dielectric film.

[0035] Among them, the dielectric film is SiO 2 thin film, forming SiO 2 The process steps of thin film include:

[0036] The aforementioned SiO 2 Thin film, wherein in the first deposition step, the gas pressure can be 500Torr, the concentration range of oxygen is 20%, the flow rate of silane is 500 mg / min, and the deposition rate range is 15nm / min; in the second deposition step, the gas The pressure can be 200 Torr, the oxygen concentration range is 5%, the silane flow rate is 2000 mg / min, and the deposition rate range is 180 nm / min.

[0037] The post-processing method includes the following steps:

[0038] SiO with deionized water 2 The film is soaked, and the process steps are: put deionized water in the treatment tank, control the temperature of the deionized water in the treatment tank at 30 ° C, and then put SiO 2 The film is placed in the treatment tank, so that the dielectric film ...

Embodiment 2

[0041] This embodiment provides a post-processing method for a dielectric film.

[0042] Among them, the dielectric film is SiO 2 thin film, forming SiO 2 The process steps of thin film include:

[0043] The aforementioned SiO 2 Thin film, wherein in the first deposition step, the gas pressure can be 500Torr, the concentration range of oxygen is 20%, the flow rate of silane is 500 mg / min, and the deposition rate range is 15nm / min; in the second deposition step, the gas The pressure can be 200 Torr, the oxygen concentration range is 5%, the silane flow rate is 2000 mg / min, and the deposition rate range is 180 nm / min.

[0044] The post-processing method includes the following steps:

[0045] SiO with deionized water 2 The film is soaked, and the process steps are: put deionized water in the treatment tank, control the temperature of the deionized water in the treatment tank at 90 °C, and then put the SiO 2 The film is placed in the treatment tank, so that the dielectric fi...

Embodiment 3

[0048] This embodiment provides a post-processing method for a dielectric film.

[0049] Among them, the dielectric film is SiO 2 thin film, forming SiO 2 The process steps of thin film include:

[0050] The aforementioned SiO 2 Thin film, wherein in the first deposition step, the gas pressure can be 500Torr, the concentration range of oxygen is 20%, the flow rate of silane is 500 mg / min, and the deposition rate range is 15nm / min; in the second deposition step, the gas The pressure can be 200 Torr, the oxygen concentration range is 5%, the silane flow rate is 2000 mg / min, and the deposition rate range is 180 nm / min.

[0051] The post-processing method includes the following steps:

[0052] Hydrogen peroxide on SiO 2 The film is sprayed, and the process steps are: spray hydrogen peroxide onto SiO 2 On the film, and through low-speed rotation (300rpm) to make the hydrogen peroxide evenly distributed on the SiO 2 On the film, at a temperature of 90°C, hydrogen peroxide and...

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Abstract

The present application discloses a post-processing method of a dielectric film, an interconnection layer and a semiconductor device. The post-processing method comprises the steps of carrying out oxidation treatment on a dielectric film so as to penetrate and form oxygen ions in the dielectric film, and carrying out UV irradiation on the dielectric film with the oxygen ions. According to the method, the dielectric film is subjected to oxidation treatment to penetrate the oxygen ions in the dielectric film, then the dielectric film with the oxygen ions is subjected to UV irradiation so as to provide energy such that oxygen and the defects such as Si dangling bonds in the dielectric film react, and the defects in the dielectric film are reduced.

Description

technical field [0001] The present application relates to the technical field of manufacturing semiconductor integrated circuits, in particular, to a post-processing method of a dielectric film, an interconnection layer and a semiconductor device. Background technique [0002] In the manufacturing process of semiconductor integrated circuits, dielectric films (such as SiO 2 , SiON, SiOC) as an isolation layer between devices. For example, dielectric films are used as spacers between interconnected metal layers during the fabrication of interconnect layers. For another example, during the fabrication of the trench isolation structure, a dielectric film is filled into the shallow trench to form an isolation layer. The quality of the above-mentioned dielectric film directly affects the isolation effect between devices, and further affects the performance of the device. [0003] Currently, processes for forming dielectric films include high-density plasma chemical vapor depos...

Claims

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Application Information

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IPC IPC(8): H01L21/316
CPCH01L21/02323H01L21/02348
Inventor 邓浩
Owner SEMICON MFG INT (SHANGHAI) CORP