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Method for regulating optical band gap of amorphous silicon film

A technology of amorphous silicon thin film and optical bandgap, which is applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of high price, low optical bandgap, increase of film manufacturing cost, etc., and achieve cost Low, adjustable range of effect

Inactive Publication Date: 2015-10-07
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

However, since the bandgap of germanium itself is 0.66eV, the optical bandgap of silicon-germanium alloy films cannot be reduced below this value, even when the germanium content in the film is as high as 95%, its optical bandgap drops to 0.78eV at most about
Moreover, due to the high price of germanium, increasing the content of germanium in the silicon-germanium alloy thin film can obtain a lower optical band gap, but at the same time it will greatly increase the manufacturing cost of the thin film

Method used

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  • Method for regulating optical band gap of amorphous silicon film

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Embodiment

[0025] Step 1: Use K9 slide as substrate. Wipe the substrate with detergent and rinse with deionized water. Put the substrate into a container filled with acetone (analytical grade), put the container into an ultrasonic cleaner, ultrasonically clean it for 15 minutes, and then rinse the substrate with deionized water. Based on the same method, continue to use ethanol (analytical grade) and deionized water to clean the substrate in sequence. Put the cleaned substrate into a container filled with deionized water.

[0026] Step 2: Using a silicon-ruthenium composite target (diameter 100mm, thickness 3mm), several pure ruthenium blocks are symmetrically inlaid on the sputtering track of the silicon target. The ratio A of the sputtering track area of ​​the ruthenium to the silicon target, 0%<A<8%.

[0027] Step 3: Use a mechanical pump to evacuate to below 3Pa, then use a molecular pump to evacuate to below 10-4Pa, and heat the substrate to 300°C. Preheat the RF matcher and gas...

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Abstract

The invention discloses a method for regulating an optical band gap of an amorphous silicon film. The optical band gap of the amorphous silicon film can be regulated by adding a ruthenium element into the amorphous silicon film. By introducing precious metal (ruthenium) into an amorphous network, the optical band gap of the amorphous silicon film can be greatly regulated under the condition of lower ruthenium content. The method can be applied to the fields of silicon-based film tandem solar cells, infrared detection devices and the like.

Description

technical field [0001] The invention belongs to the technical field of silicon-based amorphous semiconductor thin film materials and devices, and relates to a method for adjusting and controlling the optical band gap of an amorphous silicon thin film. Background technique [0002] As an important photoelectric material, amorphous silicon (a-Si) is characterized by its high light absorption rate, adjustable band gap, large temperature coefficient of resistance, large-area low-temperature (< 400°C) film formation, and simple preparation process. Moreover, it has the advantages of being compatible with Si semiconductor technology, and has been widely used in fields such as solar cells, infrared imaging, and liquid crystal displays. [0003] The optical bandgap of the intrinsic amorphous silicon thin film is about 1.7eV, and its absorption rate will drop sharply for photons with energy less than 1.7eV. Compared with the intrinsic amorphous silicon film, the energy-band-modif...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16
Inventor 李伟郭安然卢满辉盛浩宋钦剑蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA