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Solid-state insulating dielectric pulse power switch and preparation method thereof

A technology of pulse power switch and insulating medium, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, electrical components, etc., can solve the problems of complex structure and poor process feasibility of auxiliary gas-solid breakdown, and achieve simple and easy implementation Effect

Active Publication Date: 2015-10-07
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the above-mentioned problems such as the complex structure and poor process feasibility of the auxiliary gas-solid breakdown of the miniaturized pulse power switch, the present invention proposes a solid insulating dielectric pulse power switch and its preparation method

Method used

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Experimental program
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Effect test

Embodiment 1

[0051] The first step is to sputter a Cr / Cu (Cr200nm, Cu800nm) metal layer on a 2mm thick glass substrate;

[0052] In the second step, spin-coat AZ4903 photoresist with a thickness of 20 μm, and photolithographically pattern the micro-electroformed Ni metal layer to prepare the bottom electrode;

[0053] In the third step, acetone is used to release the photoresist sacrificial layer in the second step;

[0054] In the fourth step, the above bottom electrode structure is covered by spin coating with liquid polyimide, and the spin coating thickness is 30 μm;

[0055] The fifth step is to use 60°C (30min heating and 60min insulation), 90°C (20min heating and 90min insulation), 250°C (50min heating and 100min insulation), and the furnace cooling program to dry the above liquid polyimide film, and use Water sandpaper with a particle size of 5 μm is manually polished to expose the bottom electrode to the surface of the polyimide dielectric film;

[0056] Step 6, sputtering a Cr / C...

Embodiment 2

[0062] The first step is to sputter a Cr / Cu (Cr200nm, Cu800nm) metal layer on a 2mm thick glass substrate;

[0063] In the second step, spin-coat AZ4903 photoresist with a thickness of 20 μm, and photolithographically pattern the micro-electroformed Ni metal layer to prepare the bottom electrode;

[0064] In the third step, acetone is used to release the photoresist sacrificial layer in the second step;

[0065] The fourth step is to use liquid water glass inorganic medium to spin-coat the above-mentioned bottom electrode structure, and the spin-coating thickness is 30 μm;

[0066] The fifth step is to use 90°C (50min to heat up and 60min to keep warm), 180°C (50min to heat up to 90min to keep warm), and the above-mentioned liquid water glass inorganic medium film is dried with the program control scheme of furnace cooling, and the water sandpaper with a particle size of 2μm is used for manual polishing , so that the bottom electrode is exposed to the surface of the dielectri...

Embodiment 3

[0073] The first step is to sputter a Cr / Cu (Cr200nm, Cu800nm) metal layer on a 2mm thick glass substrate;

[0074] In the second step, spin-coat AZ4903 photoresist with a thickness of 20 μm, and photolithographically pattern the micro-electroformed Ni metal layer to prepare the bottom electrode;

[0075] In the third step, acetone is used to release the photoresist sacrificial layer in the second step;

[0076] In the fourth step, the above bottom electrode structure is covered by spin coating with liquid polyimide, and the spin coating thickness is 30 μm;

[0077] The fifth step is to use 60°C (30min heating and 60min insulation), 90°C (20min heating and 90min insulation), 250°C (50min heating and 100min insulation), and the furnace cooling program to dry the above liquid polyimide film, and use Water sandpaper with a particle size of 5 μm is manually polished to expose the bottom electrode to the surface of the polyimide dielectric film;

[0078] Step 6, sputtering a Cr / C...

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Abstract

The invention discloses a solid-state insulating dielectric pulse power switch and a preparation method thereof. The solid-state insulating dielectric pulse power switch comprises a solid-state insulating dielectric layer, an auxiliary gas-solid breakdown structure, a gas insulating hole and a top electrode. The auxiliary gas-solid breakdown structure is located on the upper surface of the solid-state insulating dielectric layer, is firstly insulated with the top electrode above through the gas insulating hole, and secondly constitutes a low voltage triggering loop with the top electrode and the gas insulating hole. The hollowed auxiliary gas-solid breakdown structure adopts a hollowed metal structure and allows a part of the solid-state insulating dielectric to be directly exposed in the gas insulating hole, and the high-calorie gas formed in the gas insulating hole can quickly and efficiently reach and break down the surface of the solid-state insulating dielectric layer below. The invention solves the problems of complex structure and poor technological feasibility of the auxiliary gas-solid breakdown structure of a miniaturized pulse power switch.

Description

technical field [0001] The present invention designs an auxiliary gas-solid breakdown structure applied to a pulse power switch, specifically a solid insulating dielectric pulse power switch with a hollowed-out auxiliary gas-solid breakdown structure prepared based on a micromachining process and a preparation method thereof . Background technique [0002] The pulse power switch is a short-circuit transfer switch used in the field of pulse power technology. It is an electrical switch that can be closed instantly and carry a strong pulse current at high speed. It is the core of the pulse power system and the core of pulse power technology research. Focus and key components. It can compress the energy stored in the energy storage system and quickly discharge it to achieve the purpose of high-speed release, so as to achieve power amplification output. The pulse waveform output by the system mainly depends on the pulse power switch. This kind of short-circuit transfer switch ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/00H01L21/02
Inventor 王艳孙云娜丁桂甫
Owner SHANGHAI JIAO TONG UNIV
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