Formation method of interconnect structure

Abstract

The present invention provides a method for forming an interconnection structure, comprising: forming a metal layer on a semiconductor substrate, forming a first mask layer on the metal layer, the first mask layer includes thickness of the first opening, a second mask layer is formed in the first opening, and a third mask layer is formed on the second mask layer, the metal layer is etched with the third mask layer, and in the first metal layer forming a second opening; after removing the third mask layer and the first mask layer, etching the metal layer using the second mask layer as a mask to form an interconnection structure. First form a thicker metal layer on the semiconductor substrate, and then form an interconnection structure by etching the metal layer, compared with the existing openings formed in the dielectric layer filled with metal materials to form an interconnection structure The scheme can effectively increase the size of the metal crystal grains in the formed metal layer, so that after electrification, electron scattering caused by too small metal particles can be reduced, thereby reducing the resistivity of the interconnection structure.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming an interconnection structure. Background technique [0002] With the development of semiconductor technology, the degree of integration of devices continues to increase, the process nodes of semiconductor devices continue to shrink, and the requirements for semiconductor processes are also getting higher and higher. [0003] A semiconductor device is usually a multi-layer structure, and the components are arranged on the surface of different interlayer dielectric layers (Interlayer Dielectric, ILD), and the components between different layers are electrically connected through the interconnection structure located in the interlayer dielectric layer. [0004] refer to figure 1 with figure 2 , showing a schematic diagram of a method for forming an interconnection structure in the prior art, the method for forming an interconnection structure includes:...

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Problems solved by technology

[0007] However, the resistivity of the metal material formed in the trench 13 in the prior art is relatively high, which affects the performance of the interconnection structure

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