Optical measurement method for semiconductor device material reflectivity

Abstract

The present invention provides an optical measurement method for semiconductor device material reflectivity. According to the method, for a single material, the energy E1 of incident light incident on a measured surface and the energy E1' of reflected light reflected by the measured surface are respectively measured by using an energy meter, and the semiconductor device material reflectivity R1 in air is calculated according to a formula of R1=E1' / E1; and for a double layer material, the reflectivities r1 and r2 of the two contacting materials in air are respectively measured, the refractive indexes n1 and n2 of the two materials are calculated according to the following material interface position reflectivity formula, and n3 represents the refractive index of air so as to calculate the reflectivity of the two material contacting surface position. With the optical measurement method of the present invention, the problem that the existing reflectivity measurement is only used for the parallel light is overcome, and the measurement on the reflectivity of the light beams with different focusing degrees can be achieved.

Description

technical field [0001] The invention relates to the technical field of measurement of semiconductor device material parameters, in particular to an optical measurement method for the reflectivity of semiconductor device materials. Background technique [0002] Focused laser microbeams capable of interacting with semiconductor devices enable applications such as photon emission microscopy for failure analysis, scanning beam technology and confocal laser scanning microscopy, cryptographic chip laser attack for fault injection Safety evaluation technology, pulsed laser simulation single event effect and transient dose rate effect test technology for device radiation resistance test. A common feature of the above application fields is that the focused laser beam needs to pass through the device substrate material or the front passivation layer, and be positioned in a specific area inside the device to complete the experimental test. In the process of interaction between light a...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that when the focused light beam is incident on the surface of the semiconductor device material, the incident light and the surface of the material will produce a non-parallel light beam with a certain incident angle, so that the existing parallel light reflectance measurement method is not suitable for the material surface. For the technical problem of reflectivity measurement, the present invention proposes an optical measurement method for the reflectivity of semiconductor device materials, which can meet the requirements of the reflectivity measurement of the focused beam on the surface of the device material

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