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High-speed graphene terahertz modulator

A kind of ene terahertz and graphene technology, which is applied in the field of high-speed graphene terahertz modulators, can solve the problems such as the influence of modulation rate, and achieve the effect of improving the modulation depth, expanding the application range, and being easy to operate

Inactive Publication Date: 2015-10-28
BEIHANG UNIV
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  • Application Information

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Problems solved by technology

Traditional electronically controlled metal-semiconductor superdielectric terahertz modulators have the advantages of working at room temperature, small size, easy integration and planarization, etc. However, their modulation rate is limited by the large RC time constant of the device itself and the migration of semiconductor carriers. The impact of the rate needs to be further improved

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Embodiment Construction

[0025] The present invention proposes a way to combine graphene transistors with a hyperdielectric modulation unit group to realize a design scheme for effective and high-speed modulation of space terahertz waves. The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0026] Such as Figure 1~3 As shown, the high-speed graphene terahertz modulator provided by the present invention includes a substrate 9, a graphene layer 5, a buffer layer 10, a source 1, a drain 2, a gate 3, an isolation layer 8, a plate A6, and a plate B7 and hypermedia unit 4. Among them, the substrate 9, the graphene layer 5, the buffer layer 10, the source 1, the drain 2 and the gate 3 constitute a graphene transistor, and the plate A6, the plate B7 and the hyperdielectric unit 4 constitute a hyperdielectric modulation unit group. The graphene layer 5 is grown on the substrate 9, a single layer of graphene is prepared as the graphene layer 5 by a pee...

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Abstract

The invention discloses a high-speed graphene terahertz modulator. According to the modulator, a metamaterial unit is adopted as a basic structure; a graphene transistor is adopted; the on-off of the opening of the metamaterial unit is adjusted and controlled through changing the grid voltage of the graphene transistor; and therefore, high-speed and effective modulation on terahertz waves can be realized. With the high-speed graphene terahertz modulator of the invention adopted, the modulation rate of a traditional metamaterial terahertz modulator can be effectively improved, and high-speed and high efficiency modulation on the terahertz waves can be realized. The high-speed graphene terahertz modulator of the invention can work under room temperature, can be manufactured through adopting existing processing technologies, and can be miniaturized and has high integration degree.

Description

Technical field [0001] The present invention relates to the technical field of terahertz functional devices, in particular to a high-speed graphene terahertz modulator, which can quickly and effectively modulate terahertz waves at room temperature. Background technique [0002] Terahertz (Terahertz, THz) waves usually refer to electromagnetic radiation (1THz = 10) with a frequency in the range of 0.1 to 10 THz (wavelength from 3 mm to 30 μm). 12 Hz). An electromagnetic wave with an oscillation frequency of 1THz has an oscillation period of 1ps (1ps=10 -12 s), the corresponding wavelength is 300μm. The energy of a photon with a frequency of 1THz is 4.1MeV, corresponding to 33 wavenumbers, and its characteristic temperature is 48K. It can be seen that terahertz waves have many unique properties such as transient, broadband, coherence, and low energy. With the advancement of processing technology, terahertz gaps are constantly being filled, and terahertz technology is increasingly...

Claims

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Application Information

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IPC IPC(8): G02F1/015H04B10/516
CPCG02F1/017H04B10/516
Inventor 周震陈永莉冯丽爽
Owner BEIHANG UNIV
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