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Variable-temperature material growth stages and thin film growth

A growth stage, variable technology, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve problems such as buffer layers that are not suitable for nitrogen-based devices

Inactive Publication Date: 2015-10-28
VEECO INSTR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such films are usually polycrystalline or amorphous and are not suitable as buffer layers for nitrogen-based devices.

Method used

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  • Variable-temperature material growth stages and thin film growth
  • Variable-temperature material growth stages and thin film growth
  • Variable-temperature material growth stages and thin film growth

Examples

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Embodiment Construction

[0020] specific implementation plan

[0021] first reference figure 1 , figure 1 A physical vapor deposition (PVD) sputtering system is shown and generally indicated by reference numeral 10 . In accordance with the concepts of the present invention, a PVD sputtering system 10 is used to produce a thin film of material on a substrate. It should be understood, however, that PVD sputtering system 10 is merely exemplary and that the teachings herein may be applied to other PVD systems as well.

[0022] PVD sputtering system 10 generally includes a deposition chamber 12 . A vacuum pump 14 is provided to control the pressure (vacuum or otherwise) within the deposition chamber 12 . A substrate carrier 16 is provided to support a substrate 18 within the deposition chamber 12 . As shown in the embodiment, substrate carrier 16 is a rotating carrier that rotates substrate 18 within deposition chamber 12 . The PVD sputtering system also includes a sputter target 20 that provides a...

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Abstract

A thin film of material on a substrate is formed in a continuous process of a physical vapor deposition system, in which material is deposited during a variable temperature growth stage having a first phase conducted below a temperature of about 500 °C, and material is continuously deposited as the temperature changes for the second phase to above about 800 °C.

Description

technical field [0001] The present invention generally relates to thin films and methods of forming said thin films using physical vapor deposition techniques. More specifically, the invention relates to the formation of thin films useful as buffer layers in semiconductor materials. Background technique [0002] Thin film deposition techniques are used to form thin films on an underlying substrate. Various forms of thin film deposition techniques exist, including physical vapor deposition, chemical vapor deposition, atomic layer deposition, and others. Electronic semiconductor devices are often fabricated using thin film deposition techniques. For example, light-emitting diodes (LEDs) typically include multiple thin layers of crystalline III-V semiconductor material deposited on a substrate. When a potential is applied across the LEDs, electrons migrate between the layers of material, causing excitation light. [0003] A common LED substrate material is sapphire, which i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/00
CPCC23C14/0617C23C14/34C23C14/541
Inventor A·达塔F·M·切尔托S·科利B·L·德吕
Owner VEECO INSTR