Gourd string structure cadmium sulfide-tellurium heterojunction photoelectrolysis composite material, preparation method and use

Abstract

The present invention relates to a gourd string structure cadmium sulfide-tellurium heterojunction photoelectrolysis composite material preparation method. The method comprises the following steps: S1: adding a precursor containing a sulfur telluride source and a a precursor containing a cadmium source to an organic solvent, and sufficiently stirring and uniformly mixing the substances to acquire a precursor reaction liquid; S2: performing thermostatical reacting on the precursor reaction liquid by means of two-stage microwave heating to acquire the gourd string structure cadmium sulfide-tellurium heterojunction photoelectrolysis composite material. According to the preparation method, the gourd string structure cadmium sulfide-tellurium heterojunction photoelectrolysis composite material with an excellent hydrogen production property is acquired by the selection and combination of specific process steps and process parameters. The composite material can be used in the field of water photodecomposition of hydrogen production, and has good application prospects and industrialization potential.

Description

technical field [0001] The invention provides a heterojunction composite material of n-type semiconductor and p-type semiconductor and its preparation method and application, more specifically, it provides a gourd string structure cadmium sulfide-tellurium heterojunction photocatalytic composite material and The preparation method and application belong to the field of inorganic semiconductor materials. Background technique [0002] In the field of inorganic semiconductor materials, CdS is a typical semiconductor. The band gap of CdS photocatalyst is 2.4eV, and the positions of conduction band potential (-0.87eVvs THE) and valence band potential (1.5eV) can meet the conditions of complete photolysis of water. Therefore, CdS can improve the utilization rate of sunlight and become one of the semiconductor catalysts that has attracted much attention in the sulfide system. [0003] However, when CdS is not surface modified and modified, its activity of photo-splitting water to ...

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Problems solved by technology

[0009] However, there are still many defects in the above synthesis methods, such as: the chemical vapor deposition method requires harsh synthesis conditions, generally requires high-temperature heating, rushing into an inert gas, and controlling the substrate temperature, etc., which is not easy to operate and is not suitable for mass production; and the hydrothermal method. The synthesis time is more than 10 hours, which is not convenient for mass production, and the reaction is carried out in the reactor, and the crystal growth process cannot be observed in situ, which is not convenient for studying the crystal growth mechanism.

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