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Device for drawing monocrystalline silicon downward and drawing method

A technology of monocrystalline silicon and manufacturing method, which is applied in the direction of single crystal growth, self-melting liquid pulling method, crystal growth, etc., can solve the problems of expensive equipment, difficult process control, high production cost, etc., achieve low price, reduce melting Silicon time, the effect of eliminating oxygen pollution

Inactive Publication Date: 2015-11-11
罗万前
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  • Abstract
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  • Application Information

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Problems solved by technology

[0005] The monocrystalline silicon prepared by the above-mentioned two-step Czochralski-zone melting method has expensive equipment, higher production costs, and difficult control of the process.

Method used

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  • Device for drawing monocrystalline silicon downward and drawing method

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Embodiment Construction

[0055] specific implementation

[0056] The device of the present invention is composed of a silicon melter (2+6), a main heater (1), a crystallizer (4), a seeder (11) and the like.

[0057] The drawing method of the present invention is: continuous feeding of molten silicon--continuous crystallization in the crystallizer--continuously generated crystal rods--continuously drawn downward under the support of the crystal holder.

[0058] Solid silicon is melted into liquid silicon (4) in the silicon melter, and after the upper surface of the single crystal seed substrate (9) on the crystal tray (11) in the crystallizer (6) is melted, the liquid silicon flows into In the crystallizer (6), the main heater (1) continues to precisely control the temperature of the liquid silicon (7) by means of radiation heat exchange, the liquid silicon is recrystallized on the seed crystal substrate (9), and the resulting ingot ( 8) Draw out continuously downwards from the crystal holder (11) bel...

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Abstract

The invention relates to a device for drawing monocrystalline silicon downward and a drawing method. The device is formed by a silicon melting device, heaters, a crystallizer, a crystal supporting device, and the like. The drawing method is characterized in that continuously fed molten silicon is continuously crystallized in the crystallizer, and continuously generated crystal bars are continuously led out downward under the support of the crystal supporting device. The device is low in price. The monocrystalline silicon prepared by the method has the advantages of good quality, low power consumption and low cost and can be used for preparing square crystal bars.

Description

technical field [0001] The invention relates to a device and method for pulling down single crystal silicon Background technique [0002] Now the Czochralski method is often used to pull single crystal silicon: after the silicon raw material is melted from polycrystalline silicon in the crucible, the molten silicon is crystallized and pulled upwards under the conditions of crystal rotation and crucible rotation to form a single crystal rod. [0003] The above-mentioned Czochralski monocrystalline silicon consumes a lot of power and costs a lot [0004] CN1095505C uses the Czochralski-zone melting two-step method to pull out the single crystal rod first, and then melts the single crystal rod with the method of zone melting. This single crystal is used as a solar cell, and it is said that its electrical conversion efficiency is high (about 24-26 %, the theoretical limit is 28%). [0005] The monocrystalline silicon prepared by the above-mentioned Czochralski-zone melting two...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B13/00C30B15/00C30B29/06
Inventor 张洪齐
Owner 罗万前