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Photoetching exposure method used for manufacturing light emitting diode

A technology of light-emitting diodes and exposure methods, which is applied in the field of lithography exposure for making light-emitting diodes, can solve the problems of reducing the brightness of LEDs, and achieve the effect of improving brightness and smoothing the shape of lithography graphics

Active Publication Date: 2015-11-18
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This will firstly cause a certain proportion of glue filaments to remain when peeling off the glue; secondly, the bottom of the trapezoidal electrodes evaporated is much wider than the top, which will reduce the brightness of the LED

Method used

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  • Photoetching exposure method used for manufacturing light emitting diode
  • Photoetching exposure method used for manufacturing light emitting diode
  • Photoetching exposure method used for manufacturing light emitting diode

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Embodiment Construction

[0030] Certain terms are used, for example, in the description and claims to refer to particular components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of components as a criterion for distinguishing. As mentioned throughout the specification and claims, "comprising" is an open term, so it should be interpreted as "including but not limited to". "Approximately" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and basically achieve the technical effect. The subsequent description of the specification is a preferred implementation mode for implementing the application, but the description is for the purpose of illustrating the general principles of the application, and is not intende...

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Abstract

The application discloses a photoetching exposure method used for manufacturing a light emitting diode. The photoetching exposure method comprises the following steps: evenly gluing; softly baking; and determining the exposure energy, exposure time and exposure light intensity of sub-step exposure according to total exposure energy so as to carry out the sub-step exposure, wherein the total exposure energy is E and the exposure energy of each time of exposure is E1, E2,...,E(n-1) and En, E is equal to E1+E2+...+E(n-1)+En, the exposure time of each time of exposure is T1, T2,...T(n-1) and Tn, the exposure light intensity of each time of exposure is Q1, Q2,...Q(n-1) and Qn, and n is a positive integer more than or equal to 2. By virtue of the photoetching exposure method disclosed by the application, the problems that a photoresist is stripped and removed and filaments are remained are solved and the brightness of LEDs is improved.

Description

technical field [0001] The present application relates to the fabrication of light-emitting diodes, and more particularly, to a photolithographic exposure method for fabricating light-emitting diodes. Background technique [0002] A light-emitting diode (Light-EmittingDiode, referred to as LED) is a semiconductor electronic device that converts electrical energy into light energy. This electronic component appeared as early as 1962. In the early days, it could only emit red light with low luminosity. Later, other monochromatic light versions were developed. Today, the light that can be emitted has covered visible light, infrared rays and ultraviolet rays, and the luminosity has also increased to a considerable extent. of luminosity. With the continuous advancement of technology, the use has also developed from being used as indicator lights and display panels at the beginning to being widely used in displays, TV lighting decoration and lighting. [0003] At present, the pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F7/42
Inventor 徐平苗振林卢国军
Owner XIANGNENG HUALEI OPTOELECTRONICS
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