Method for testing characteristic representing crosstalk between high voltage and low voltage
A high-voltage device and test unit technology, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve problems such as increased power consumption, lack of design platforms, and restrictions on the development of integrated circuits
Inactive Publication Date: 2015-11-25
SHANGHAI RES INST OF MICROELECTRONICS SHRIME PEKING UNIV
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Problems solved by technology
[0002] With the rapid development of integrated circuits, traditional silicon technology has more and more problems in device theory, device structure and manufacturing process: the increase in integration leads to a rapid increase in power consumption, and the thinning of the gate oxide layer leads to dielectric Layers are easily broken down, these problems seriously restrict the development of integrated circuits
[0003] But it is not enough to know how SOI devices are designed and manufactured
For general IC designers, due to the lack of design platform and IP tool support, IC designers are at a loss even if they want to adopt this process
Method used
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Embodiment Construction
[0011] 1 as figure 1 , connect different test units to the input ports, select the output of the test unit through the selector control signal control1, place the high-voltage module at different distances from the test unit, and control the opening of the high-voltage modules at different distances through the selector control3.
[0012] 2 as figure 2 , control the opening of different BUFs through the control2 signal, and control the opening time of the high-voltage module.
[0013] 3Set, together with the input signal to control the selector 2 to control the opening of the high voltage module
[0014] 4 Use control2 to control the selector 2, select 0 BUF, so that the high-voltage device and the unit under test are turned on at the same time, that is figure 2 Turn on moment 1 shown. Measure the effect of turning on the high-voltage signal on the logic value of the test unit at this time.
[0015] 5 Use control2 to control the selector 3 to select multiple BUFs, so that...
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The invention provides a method for testing an effect of a high-voltage environment to a standard cell library. A working environment in which an SOI low-voltage device and a high-voltage device coexist is considered. According to the method of the invention, through measuring delay of a measured cell and signal fluctuation, detection to the operation state of the cell in a high-voltage environment is realized. Through setting a plurality of distances between the high-voltage device and the low-voltage device, and setting the starting time of the high-voltage device through a buffer, different kinds of effects of the high-voltage environment to a testing unit are tested. A selector is added into a testing chip for reducing number of PADs, thereby realizing a purpose of reducing the area of the chip.
Description
technical field [0001] The invention belongs to the field of chip design, and particularly relates to a testing method utilizing the influence of a high-pressure environment on an SOI standard cell library. Background technique [0002] With the rapid development of integrated circuits, traditional silicon technology has more and more problems in device theory, device structure and manufacturing process: the increase in integration leads to a rapid increase in power consumption, and the thinning of the gate oxide layer leads to dielectric Layers are easily broken down, and these problems seriously restrict the development of integrated circuits. As a full dielectric isolation technology, SOI has incomparable advantages over traditional bulk silicon. Because it adopts a full dielectric isolation structure, the SOI device has good radiation resistance characteristics, completely eliminates the latch-up effect of bulk silicon CMOS circuits, and the SOI process is smaller than ...
Claims
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IPC IPC(8): G01R31/00
Inventor 徐帆陈曦张翼程玉华
Owner SHANGHAI RES INST OF MICROELECTRONICS SHRIME PEKING UNIV