A method for manufacturing a terminal structure of a semiconductor device

Abstract

The invention provides a semiconductor device terminal structure manufacturing method. The method comprises the following steps of (1) providing a semiconductor substrate with a field oxide formed on the surface, forming first photoresist covering the terminal area of the field oxide; (2) adopting a dry method etching technology to remove a part of the field oxide thickness; (3) adopting a wet method corrosion technology to remove the resting part thickness of the field oxide and making the resting field oxide have an inclined side wall formed; (4) forming a first hard mask layer, a second hard mask layer and second photoresist; (5) forming an etching window through a photoetching technology and etching the semiconductor substrate through the etching window to form a groove structure. The dry method etching technology and the wet method corrosion technology are adopted in two steps to form the field oxide with the inclined side wall. Organic matter accumulation is thus prevented. The silicon oxynitride can effectively improve the contour quality of the groove structure and further make leakage currents reduced. IGSS is effectively lowered while the product yield rate is improved. The method which has simple steps is suitably used for industrial production.

Description

Technical field [0001] The invention belongs to the field of semiconductor manufacturing, and particularly relates to a method for manufacturing a terminal structure of a semiconductor device. Background technique [0002] Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a field-effect transistor that can be widely used in analog and digital circuits. MOSFETs can be divided into "N-type" and "P-type" MOSFETs according to the polarity of their "channels", which are usually called NMOSFETs and PMOSFETs. Because MOSFET has the advantages of low manufacturing cost, small use area and high integration, it is widely used in large-scale integrated circuits (Large-Scale Integrated Circuits, LSI) or very large-scale integrated circuits (Very Large-Scale Integrated Circuits, VLSI). ) In the field. Due to the gradual improvement in the performance of MOSFET components, in addition to traditional applications such as microprocessors, microcontrollers and other digital signal p...

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Problems solved by technology

[0011] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for manufacturing a terminal structure of a semiconductor device, which is used to solve the defect in the trench structure caused by the accumulation of organic substances at the edge of the field oxide layer in the prior art, which leads to poor product quality. rate reduction problem

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