The invention relates to a heat insulation
structure based on a
Parylene filling and a preparation method of the heat insulation
structure based on the
Parylene filling. The preparation method of the heat insulation structure includes the steps of firstly,
machining a structural layer on a base
silicon wafer, and enabling a
silicon oxide interlayer to exist between the structural layer and the base
silicon wafer; secondly, adhering a glass lining to the structural layer; thirdly conducting
thinning on the back surface of the base silicon
wafer, and then conducting deep
etching inside a reserved heat insulation region to form evenly arranged column bodies; fourthly, filling
Parylene materials in the heat insulation region on the back surface of the base silicon wafer; fifthly, forming a supporting structure on the back surface of the base silicon wafer in a photoetching mode; sixthly, stripping the glass lining which is adhered to the front surface of the base silicon wafer. According to the heat insulation
structure based on the Parylene filling and the preparation method of the heat insulation structure based on the Parylene filling, a post
CMOS technology can be compatible, effective
thermal resistance of the heat insulation region is high, the
layout area can be saved in comparison with traditional parallel grooves, limitation for a
contour diagram is little, heat insulation performance can be improved, and reliability of a device can be improved.