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An n-channel non-volatile flash memory device and methods for compiling, erasing and reading the same

A non-volatile, flash memory device technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problem of erase saturation, high power consumption of channel hot electron injection programming, etc., to achieve small programming current and reduce The effect of electron surplus and small grid length

Active Publication Date: 2018-08-10
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0006] The object of the present invention is to overcome the above-mentioned defect that prior art exists, provide a kind of N-channel non-volatile flash memory device and compiling, erasing and reading method thereof, can overcome the erasing problem that existing p-channel B4-Flash exists Eliminate the problem of saturation, and solve the problem of high power consumption in the existing channel hot electron injection programming by using low-power programming and erasing methods

Method used

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  • An n-channel non-volatile flash memory device and methods for compiling, erasing and reading the same
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  • An n-channel non-volatile flash memory device and methods for compiling, erasing and reading the same

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Embodiment Construction

[0033] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0034] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation and simplification are included, therefore, it should be avoided to be interpreted as a limitation of the present invention.

[0035] In the following specific embodiments of the present invention, please refer to figure 2 , figure 2 It is a structural schematic diagram of an N-channel non-volatile flash memory device in a preferred embodiment of the present invention. Such as figure 2As shown, an N-channel non-volatile flash memory device of the present invention incl...

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Abstract

The invention discloses an N-channel non-volatile flash memory device, which includes: a P-type silicon substrate, with N-type doped source terminals, drain terminals and N-channels in the substrate; The gate structure on the substrate between them includes, from bottom to top, a gate oxide layer, a polysilicon floating gate, a first silicon dioxide layer, a silicon nitride layer, a second silicon dioxide layer and a polysilicon control gate. , the polycrystalline silicon floating gate is used to store charges; the flash memory device proposed by the invention uses a low-power band tunneling hot hole injection compiler and a channel FN electron tunneling and erasing method, which solves the problem of the original channel hot electron Injecting the problem of high power consumption in programming can make the traditional floating-gate transistor structure have a smaller gate length and overcome the erase saturation problem that traditional p-channel B4-Flash cannot solve, making it easier to manufacture.

Description

technical field [0001] The present invention relates to the technical field of semiconductor memory, more specifically, to a non-volatile flash memory device with an N-type doped channel and its compiling, erasing and reading methods. Background technique [0002] For the NOR flash memory unit, the most important factor limiting the further reduction of its size is the further shortening of the gate length. This is mainly because the compilation method of channel hot electron (CHE) injection used in NOR flash memory cells requires a certain voltage at the drain of the device, and this voltage has a great impact on the penetration of the source and drain. Therefore, channel hot electron (CHE) injection is not suitable for short-channel devices. Another problem is that NOR flash memory is limited by the programming rate compared with NAND and AND data storage devices. According to the prediction of the document "G. Servalli, et al., IEDM Tech. Dig., 35_1, 2005", the physical...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11521H10B41/30H10B69/00
Inventor 顾经纶彭兴伟
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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