SSi/SiGe/sSOI substrate-based complementary metal-oxide-semiconductor transistor (CMOS) device and manufacturing method thereof

Abstract

The invention provides an sSi / SiGe / sSOI substrate-based complementary metal-oxide-semiconductor transistor (CMOS) device and a manufacturing method thereof. The CMOS device comprises a P-channel metal oxide semiconductor (PMOS) device and an N-channel metal oxide semiconductor (NMOS) device, wherein the PMOS device comprises a silicon substrate, a buried oxide layer, a strained silicon layer, an SiGe layer, a strained silicon cap layer, an SiGe channel, a P-type source region, a P-type drain region and a grid structure; the SiGe channel is formed in the SiGe layer; the P-type source region and the P-type drain region are formed in the SiGe layer and the strained silicon cap layer and are located at two sides of the SiGe groove respectively; the grid structure is formed in the surface of the strained silicon cap layer and corresponds to the SiGe channel; the NMOS device comprises an sSi channel, an N-type source, an N-type drain region and a grid structure; the sSi channel, the N-type source and the N-type drain region are formed in the strained silicon layer of the sSOT substrate; the N-type source and the N-type drain region are located at two sides of the sSi channel respectively; and the grid structure is formed in the surface of the sSi channel. The CMOS device provided by the invention has the advantages of high speed, heavy drive current, low power consumption, high integration level and the like, and has a wide application prospect in the field of an integrated circuit.

Description

technical field [0001] The invention belongs to the field of integrated circuit design and manufacture, in particular to a CMOS device based on sSi / SiGe / sSOI substrate and a manufacturing method thereof. Background technique [0002] CMOS (Complementary Metal Oxide Semiconductor) refers to the complementary MOS integrated circuit manufacturing process composed of complementary metal oxides (PMOS tube and NMOS tube). It is characterized by low static power consumption, high input impedance, strong anti-interference, and wide power supply voltage range. Since the gate circuit composed of a pair of MOSFETs in CMOS is seen in an instant, either the PMOS is turned on, or the NMOS is turned on, or both are turned off, which is much more efficient than a linear triode (BJT), so the power consumption is very low. Now, CMOS is widely used in important electronic equipment chips such as computers, cameras, and mobile phones. [0003] SOI (Silicon-On-Insulator, silicon on insulating s...

AI Technical Summary

Problems solved by technology

However, according to the planning of the International Semiconductor Industry Development Blueprint (ITRS2009), integrated circuits have gradually developed from the era of microelectronics to the era of micro-nanoelectronics. The existing bulk silicon materials and processes are approaching their physical limits and have encountered severe challenges.

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