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Plasma etching equipment

A technology of plasma and etching equipment, which is applied in the field of plasma etching equipment, can solve problems such as complex structures, and achieve the effects of high-efficiency etching, controllable surface texture density, and simple structure

Active Publication Date: 2017-04-12
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this kind of equipment can etch in silicon-based materials such as glass, it needs a deposition reaction chamber and an etching reaction chamber, which makes the structure of the plasma etching equipment more complicated, and it is difficult to perform microscopic etching on the surface of silicon-based materials. Nanolithography Problems

Method used

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Embodiment Construction

[0021] The technical solutions of the present invention will be described in further detail below through specific implementation methods.

[0022] See figure 1 and figure 2 , an embodiment of the present invention provides a plasma etching device for etching a glass workpiece 10, which includes a plasma generation chamber 2 provided with a gas raw material inlet 1, and a pumping chamber 2 communicated with the plasma generation chamber 2. The vacuum device 13 , the anode structure 3 arranged inside the plasma generation chamber 2 and the cathode structure 4 arranged at intervals from the anode structure 3 . The anode structure 3 is arranged on the top of the plasma generation chamber 2 and is electrically connected to the plasma generation chamber 2, and the cathode structure 4 is arranged on the bottom of the plasma generation chamber 2 and connected to the plasma The generation chamber 2 is electrically insulated.

[0023] In this embodiment, the plasma etching equipmen...

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Abstract

The invention provides plasma etching equipment, which comprises a cathode structure, wherein the cathode structure comprises a cathode plate, an anode cover cylinder used for covering the cathode plate, and an insulating plate; one end of the anode cover cylinder is used for placing a glass workpiece, so that the glass workpiece is matched with the anode cover cylinder and the insulating plate to form an electrical insulation cavity, thus the cathode plate and the anode cover cylinder are electrically insulated. The plasma etching equipment is simple, and is high in processing efficiency; and the plasma etching equipment adopts a low-temperature plasma technology to reduce thermal radiation of plasma on the processed workpiece, and achieves the purposes of carrying out low-temperature, rapid, efficient fine etching processing on surfaces of the processed workpiece.

Description

technical field [0001] The invention relates to a plasma etching device, in particular to a plasma etching device for etching on the surface of a silicon-based material, such as a glass surface. Background technique [0002] Glass is one of the inorganic silicon substances. It is an amorphous solid, fragile and transparent. Modern people are no longer satisfied with the production of surface texture by physical and mechanical means, mainly because the efficiency of mechanical etching is low and difficult to process. Micro-nano-scale surface texture, so people are currently focusing on processing the surface texture of the glass surface by means of chemical, plasma etching or laser. [0003] There are also many existing patents on plasma etching equipment. For example, the application for an invention patent with the application number "201310541608.0" and the invention name "plasma etching equipment and method" discloses a plasma etching equipment including a comprehensive ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
Inventor 郑锦华王俊杰廖晓燕吴双魏新煦
Owner ZHENGZHOU UNIV