Two-way withstand voltage silicon carbide solid-state switch

Abstract

The invention discloses a two-way withstand voltage silicon carbide solid-state switch. The switch comprises a silicon carbide chip, a switch plate, a positioning plate, and a bonding layer, the silicon carbide chip comprises a silicon carbide upper chip and a silicon carbide lower chip, a plurality of interconnection metal columns penetrating through the switch plate in a vertical manner are embedded in the middle of the switch plate, the positioning plate comprises an upper positioning plate and a lower positioning plate, the bonding layer comprises an upper bonding layer and a lower bonding layer, the silicon carbide upper chip and the upper positioning plate are connected with the upper surface of the switch plate via the upper bonding layer, and the silicon carbide lower chip and the lower positioning plate are connected with the lower surface of the switch plate via the lower bonding layer. According to the switch, the plurality of interconnection metal columns penetrating through the switch plate in the vertical manner are embedded in the middle of the switch plate so that electrical interconnection is realized via the interconnection metal columns, reliability and effectiveness are realized, the process is simple, effective turn-off and two-way withstand voltage of the switch are simultaneously realized, the size of the switch is equivalent to the size of the usual silicon carbide chip, common silicon carbide devices and packaging process are employed, and the machining does not have challenged difficulties.

Description

Technical field [0001] The invention involves the field of power electronics technology and power semiconductor device technology. It is specifically a two -way voltage -resistant silicon carbide solid switch. Background technique [0002] High -voltage, large current, anti -radiation, chip -based semiconductor solid switch has a lot of application space in the fields of aerospace, power electronics and power semiconductors.Traditional silicon -based solid -state switch performance has approached the limits of the material, and it is difficult to further improve.The prohibited bandwidth of the wide -band semiconductor silicon carbide material is three times the width of the silicon. The penetration field is one or more higher than that of silicon, which can greatly increase the level of resistance, large current, radiation resistance and miniaturization of solid -state switches. [0003] The existing silicon carbide solid -state switch with high voltage and large -current resista...

AI Technical Summary

Problems solved by technology

U.S. Patents US7391057 and US7615801 disclose the structure and manufacturing method of bidirectional voltage-resistant silicon carbide devices based on low-doped high-purity semi-insulating N-type or P-type substrates, which can realize bidirectional voltage-resistant silicon carbide devices, and bidirectional voltage-resistant carbonization The silicon thyristor is used as an example to introduce this method, but it does not mention whether it solves the problem that the silicon carbide thyristor is difficult to effectively turn off when the conduction current exists, and its process requires processing of the same complexity on the front and back of the substrate , it is also necessary to form a symmetrical groove with a certain slope on the side of the silicon carbide device (usually only a few hundred um) by plasma etching or mechanical grinding / polishing. Strong, which has a great impact on the process difficulty, reliability, and realizability of solid-state switches

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