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Light emitting diode structure and manufacturing method thereof

A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of difficult, incomplete, and easily damaged epitaxial layer peeling off of substrates, and achieves reduction of dislocation defects and epitaxial wafer warping. The effect of reducing the total reflection light absorption and improving the production yield

Active Publication Date: 2017-11-17
QUANZHOU SANAN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this lattice mismatch and thermal mismatch will generate greater stress during the epitaxial growth process, thereby introducing dislocation defects, reducing the lattice quality of the material, and there are problems such as warping in the epitaxial growth, which affects the uniformity of the material. sex
[0003] In addition, light extraction efficiency is also one of the key factors affecting the performance of LED devices. The GaN material has a different refractive index from the substrate, and there is total reflection and light absorption. Only the light generated within a limited range of refraction angles can be emitted into the air, resulting in Low light extraction efficiency
Although the vertical light-emitting diode structure is currently used in the industry to increase light extraction efficiency, the traditional vertical light-emitting diode process has problems such as difficulty in peeling off the substrate, easy damage to the epitaxial layer, and incomplete peeling, so that it is impossible to improve the light output of LED devices on a large scale. efficiency

Method used

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  • Light emitting diode structure and manufacturing method thereof
  • Light emitting diode structure and manufacturing method thereof
  • Light emitting diode structure and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0058] This embodiment provides a light emitting diode structure and a manufacturing method, and the specific steps are as follows:

[0059] Such as figure 1 As shown, step (1) firstly provides a sapphire substrate 1, the surface of the substrate 1 has a pattern of grooves 2 and raised structures, and the opening diameter of the groove 2 is 1-5 μm, preferably 4-5 μm. When the opening diameter of the groove is less than 4 μm, the opening of the groove 2 is small, the internal structure of the groove 2 is difficult to manufacture, and the process controllability is poor; when the opening diameter of the groove 2 is greater than 5 μm, it takes longer to grow the first semiconductor Layer 7 is used to cover the groove 2, which greatly increases the manufacturing time of the light emitting diode, but the beneficial effect is not obvious.

[0060] Such as Figure 2~3 As shown, step (2) grows SiO on the patterned substrate 1 2 The barrier layer 3, defining the sidewall of the groo...

Embodiment 2

[0067] Such as Figure 8~12 As shown, the difference between this embodiment and Embodiment 1 is that the material of the substrate 1 is Si, and after step (3) of Embodiment 1, the AlN transition layer 6 is covered on the region 22 not covered by the sidewall barrier layer, so that Improve the GaN layer 4, Al x Ga 1-x N high temperature resistant layer 5, first semiconductor layer 7, light emitting epitaxial layer 8, second semiconductor layer 9 growth quality.

Embodiment 3

[0069] The difference between this embodiment and Embodiment 2 is that the material of the substrate 1 in this embodiment is SiC, the material of the transition layer 6 is Al, and the transition layer 6 controls the growth polarity of the GaN layer 4 on the substrate 1 to improve the growth of the GaN layer 4. quality.

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Abstract

The invention discloses a light-emitting diode structure and a manufacturing method thereof. The light-emitting diode structure comprises a patterned substrate, a high temperature resistant layer and a light-emitting epitaxial layer, wherein the light-emitting epitaxial layer is clamped between a first semiconductor layer and a second semiconductor layer which are located on the high temperature resistant layer. The groove side walls at the surface of the patterned substrate and the high temperature resistant layer are wrapped with holes. The structure disclosed by the invention can effectively reduce stress of the epitaxial layer, thereby being conductive to improving the luminous efficiency, and being easy to strip the substrate at the same time.

Description

technical field [0001] The invention relates to a light-emitting diode structure and a manufacturing method thereof, especially a method of manufacturing holes on an epitaxial layer substrate, and is applicable to other power semiconductor devices. Background technique [0002] In recent years, LED devices often use heterogeneous substrates in the process of epitaxial growth, such as sapphire, Si, and SiC, etc., which have relatively serious lattice mismatch and thermal mismatch with the epitaxial layer, and this The problem is more prominent during the growth of large-scale epitaxial wafers. However, this lattice mismatch and thermal mismatch will generate greater stress during the epitaxial growth process, thereby introducing dislocation defects, reducing the lattice quality of the material, and there are problems such as warping in the epitaxial growth, which affects the uniformity of the material. sex. [0003] In addition, light extraction efficiency is also one of th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/22
CPCH01L33/007H01L33/22
Inventor 刘建明张洁徐宸科
Owner QUANZHOU SANAN SEMICON TECH CO LTD
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