Manufacturing method for sapphire frame-free touch screen panel
A borderless, sapphire technology, applied in stone processing equipment, chemical instruments and methods, machine tools suitable for grinding workpiece edges, etc., can solve the problems of low yield and poor touch screen quality, and achieve high yield and uniformity. good, high productivity
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Embodiment 1
[0032] The preparation method of the sapphire borderless touch screen panel of this embodiment specifically includes the following steps:
[0033] Step 1. Crystal growth: Fill the crucible of the crystal growth furnace with pure Al 2 O 3 Raw material, the crucible is provided with a rotatable and liftable pull rod above the crucible, the lower end of the pull rod is clamped with a C crystal orientation seed crystal; the crystal growth furnace is evacuated and the protective gas is introduced, and the temperature is raised to 2200°C to make Al 2 O 3 Melt, control the liquid surface temperature of the melt to 2055℃, and place the seed crystal in Al 2 O 3 The upper surface of the melt is brought into contact with the melt for 1 hour; after the seed crystal is fully wetted with the melt, the seed crystal is lifted and rotated to achieve necking-expanding-equal diameter growth; the necking stage is controlled The liquid surface temperature of the melt is 2050℃, the seed crystal is pulle...
Embodiment 2
[0044] The preparation method of the sapphire borderless touch screen panel of this embodiment specifically includes the following steps:
[0045] Step 1. Crystal growth: Fill the crucible of the crystal growth furnace with pure Al 2 O 3 Raw material, the crucible is provided with a rotatable and liftable pull rod above the crucible, the lower end of the pull rod is clamped with a C crystal orientation seed crystal; the crystal growth furnace is evacuated and the protective gas is introduced, and the temperature is raised to 2100°C to make Al 2 O 3 Melt, control the liquid surface temperature of the melt to 2055℃, and place the seed crystal in Al 2 O 3 The upper surface of the melt is brought into contact with the melt for 0.5h; after the seed crystal is fully wetted with the melt, the seed crystal is lifted and rotated, so as to realize the necking-expanding-equal diameter growth; the necking stage, Control the liquid surface temperature of the melt to 2050℃, pull up the seed crys...
Embodiment 3
[0056] The preparation method of the sapphire borderless touch screen panel of this embodiment specifically includes the following steps:
[0057] Step 1. Crystal growth: Fill the crucible of the crystal growth furnace with pure Al 2 O 3 Raw materials, the crucible is provided with a rotatable and liftable pull rod above the crucible, and the lower end of the pull rod is clamped with a C crystal orientation seed crystal; the crystal growth furnace is evacuated and the protective gas is introduced, and the temperature is raised to 2150°C to make Al 2 O 3 Melt, control the liquid surface temperature of the melt to 2055℃, and place the seed crystal in Al 2 O 3 The upper surface of the melt is brought into contact with the melt for 1 hour; after the seed crystal is fully wetted with the melt, the seed crystal is lifted and rotated to achieve necking-expanding-equal diameter growth; the necking stage is controlled The liquid surface temperature of the melt is 2050℃, the seed crystal is ...
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