A resistive memory cell

A storage unit and resistance-type technology, applied in electrical components and other directions, can solve the problems of no stable intermediate state and difficult to guarantee the consistency of multi-value storage, so as to improve the storage density and stability, and achieve the effect of stability and consistency.

Inactive Publication Date: 2018-04-10
HENAN UNIV OF SCI & TECH
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the structure of the single-layer resistive variable layer determines that there is no stable intermediate state during the reset process, it is difficult to guarantee the consistency of the multi-value storage of the single-layer resistive variable layer structure.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A resistive memory cell
  • A resistive memory cell
  • A resistive memory cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A preparation method of a resistive memory cell, the steps are as follows:

[0036] (1) The lower electrode layer is formed on the substrate by magnetron sputtering coating method: a metal Cu target is used, and Ar gas is used as the working gas to form a Cu thin film on the glass substrate by sputtering, and the working pressure during sputtering is 5 ×10 -1 Pa~10×10 - 1 Pa, the sputtering time is 20~25min, the sputtering voltage is 300~380V, the sputtering current is 120~180mA, and finally a Cu lower electrode layer with a thickness of about 80-150nm is formed on the glass substrate;

[0037] (2) Form an insulating dielectric layer on the Cu lower electrode layer: the method of forming the insulating dielectric layer can be atomic layer deposition or spin coating, and the thickness of the insulating dielectric layer is 300nm~5000nm. Material can be SiO 2 Or SiN, after the insulating dielectric layer is formed, a trench is formed on the insulating dielectric layer ...

Embodiment 2

[0042] A preparation method of a resistive memory cell, the steps are as follows:

[0043] (1) Use a metal Pt target, use Ar gas as the working gas, and form a Pt film on a semiconductor substrate by sputtering. The semiconductor substrate can be a Si substrate, and the working pressure during sputtering is 5×10 -1 Pa~10×10 -1 Pa, the sputtering time is 20~45min, the sputtering voltage is 300~380V, the sputtering current is 120~180mA, and a Pt lower electrode layer with a thickness of about 80-150nm is formed;

[0044] (2) Form an insulating dielectric layer on the Pt lower electrode layer. The method of forming the insulating dielectric layer can be deposition or spin coating. The thickness of the insulating dielectric layer is 300nm~5000nm. The material of the insulating dielectric layer can be SiO 2 Or SiN material, after forming the insulating dielectric layer, using a traditional photolithography process to form a trench on the insulating dielectric layer to form other ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a resistive memory unit, and relates to the technical field of non-volatile memory devices. The resistive memory unit comprises a substrate, a lower electrode layer, a function layer, an upper electrode layer and an insulation dielectric layer. The lower electrode layer covers the substrate. The insulation dielectric layer covers the lower electrode layer. A trench is arranged on the insulation dielectric layer, wherein the bottom of the trench extends to the lower electrode layer. The upper electrode layer and the function layer are successively in the trench from top to bottom. The function layer directly contacts the lower electrode layer. The upper electrode layer is flush with the surface of the insulation dielectric layer. The function layer is a resistance variable memory layer, is in an upper and lower layer laminated structure, and is formed by laminating an amorphous SnOx layer and a nitrogen oxide MnOxNy layer. The range of x in the amorphous SnOx is between 0 and 2. The range of x and the range of y in the nitrogen oxide MnOxNy are respectively between 1 and 2 and between 0.001 and 2. According to the resistive memory unit provided by the invention, stable multi-value memory is realized, and the memory density and stability of the memory unit can be improved.

Description

technical field [0001] The invention relates to the technical field of nonvolatile memory devices, in particular to a resistive variable memory unit with a high-density film structure. Background technique [0002] In recent years, with the rapid development of computer technology and Internet technology, non-volatile memory devices have played an increasingly important role in the semiconductor industry. In a nonvolatile memory device, the basic cells of the device retain data stored in the basic cells even when power is cut off. Resistive Random Access Memory (RRAM) is a new type of non-volatile memory. Its working mechanism is to trigger a reversible resistance transition effect in an external electric field, that is, under the action of an applied voltage, the resistance of the device is in a low resistance state. ("0") and a high-resistance state ("1"), and the resulting resistance can be maintained after the external electric field is removed. Resistive memory has be...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 刘汇慧李同伟琚伟伟张利平苏向英
Owner HENAN UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap