A resistive memory cell

A storage unit and resistance-type technology, applied in electrical components and other directions, can solve the problems of no stable intermediate state and difficult to guarantee the consistency of multi-value storage, so as to improve the storage density and stability, and achieve the effect of stability and consistency.
CN105185902BInactive Publication Date: 2018-04-10HENAN UNIV OF SCI & TECH
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
HENAN UNIV OF SCI & TECH
Publication Date
2018-04-10
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention provides a resistive memory unit, and relates to the technical field of non-volatile memory devices. The resistive memory unit comprises a substrate, a lower electrode layer, a function layer, an upper electrode layer and an insulation dielectric layer. The lower electrode layer covers the substrate. The insulation dielectric layer covers the lower electrode layer. A trench is arranged on the insulation dielectric layer, wherein the bottom of the trench extends to the lower electrode layer. The upper electrode layer and the function layer are successively in the trench from top to bottom. The function layer directly contacts the lower electrode layer. The upper electrode layer is flush with the surface of the insulation dielectric layer. The function layer is a resistance variable memory layer, is in an upper and lower layer laminated structure, and is formed by laminating an amorphous SnOx layer and a nitrogen oxide MnOxNy layer. The range of x in the amorphous SnOx is between 0 and 2. The range of x and the range of y in the nitrogen oxide MnOxNy are respectively between 1 and 2 and between 0.001 and 2. According to the resistive memory unit provided by the invention, stable multi-value memory is realized, and the memory density and stability of the memory unit can be improved.
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Description

technical field

[0001] The invention relates to the technical field of nonvolatile memory devices, in particular to a resistive variable memory unit with a high-density film structure. Background technique

[0002] In recent years, with the rapid development of computer technology and Internet technology, non-volatile memory devices have played an increasingly important role in the semiconductor industry. In a nonvolatile memory device, the basic cells of the device retain data stored in the basic cells even when power is cut off. Resistive Random Access Memory (RRAM) is a new type of non-volatile memory. Its working mechanism is to trigger a reversible resistance transition effect in an external electric field, that is, under the action of an applied voltage, the resistance of the device is in a low resistance state. ("0") and a high-resistance state ("1"), and the resulting resistance can be maintained after the external electric field is removed. Resistive memory has be...

Claims

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