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A method for removing residues on mems welding pads

A technology for residues and solder pads, which is applied in the fields of crafts, decorative arts, gaseous chemical plating, etc. for producing decorative surface effects, and can solve problems such as rough and uneven solder pad surfaces and inability to effectively remove solder pad residues

Active Publication Date: 2017-02-15
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above-mentioned shortcoming of the prior art, the purpose of the present invention is to provide a method for removing residues on the welding pads of MEMS devices, which is used to solve the problem that the residues on the welding pads cannot be effectively removed in the prior art, or cause Rough and uneven pad surface

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  • A method for removing residues on mems welding pads
  • A method for removing residues on mems welding pads
  • A method for removing residues on mems welding pads

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Embodiment Construction

[0040] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0041] Please refer to attached picture. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be change...

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Abstract

The invention provides a method for removing residues on a welding pad of an MEMS (Micro-Electro-Mechanical Systems) device. The method comprises the following steps: firstly, providing the MEMS device of which the welding pad is exposed after an etching process, wherein the residues are left on the welding pad due to the etching process; and then, putting the MEMS device into a reaction cavity, introducing SiH<4> and N<2>O gases into the reaction cavity, and carrying out an ionizing reaction on the gases to generate an intermediate product SiO<x> film layer on the surface of the welding pad; and reacting the residues with the SiO<x> film layer to generate an ionic cluster group, thereby removing the residues. The SiH<4> and N<2>O gases undergo the reaction to generate the SiO<x> film layer, and the film layer further reacts with the residues to generate the ionic cluster group, thereby removing the residues. Through adoption of the method, the residues can be removed completely. Meanwhile, the surface of the welding pad is kept smooth and flat, and the process requirements of MEMS device manufacturing are met.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a method for removing residues on MEMS welding pads. Background technique [0002] Micro-Electro-Mechanical Systems (MEMS) is a micro-device or system that can be produced in an integrated manner, integrating micro-mechanisms, micro-sensors, micro-actuators, and signal processing and control circuits. It is developed with the development of semiconductor integrated circuit micro-processing technology and ultra-precision machining technology. Microelectronic devices using MEMS technology have very broad application prospects in aviation, aerospace, environmental monitoring, biomedicine and almost all fields that people come into contact with. Compared with the traditional mechanical structure, the size of the MEMS device is smaller, the maximum is no more than one centimeter, or even only a few microns, and the thickness of the device layer is even smaller. With ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
Inventor 金滕滕杨勇
Owner SEMICON MFG INT (SHANGHAI) CORP