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A kind of low temperature sintered low dielectric glass ceramic material and preparation method thereof

A glass-ceramic and low-temperature sintering technology, which is applied in the field of low-temperature sintering glass-ceramic materials with low dielectric constant and low loss and its preparation field, can solve the problems of high slurry viscosity, high sintering temperature and high cost, and achieves improved transmission. Effects of speed and wiring density, stable temperature coefficient of resonance frequency, and lower sintering temperature

Inactive Publication Date: 2017-11-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, pure Al 2 o 3 The sintering temperature of ceramics is relatively high (1400-1500°C), so it cannot be directly co-fired with low melting point metals such as Ag and Cu.
In order to reduce the sintering temperature, one of the traditional methods is to add low melting point oxides, such as B 2 o 3 and V 2 o 5 , while the free B 2 o 3 and V 2 o 5 In the late casting process, it is easy to cause the viscosity of the slurry to be too large and unstable, which limits its practical application; another method is Al 2 o 3 -Crystalized glass, that is, a small amount of ceramics are added to the crystallized glass as a nucleating agent, and the final performance of the product depends on the degree of crystallization of the sample
However, this method requires a large amount of crystallized glass, resulting in high cost, which greatly limits the development of glass-ceramic composite substrate materials.

Method used

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  • A kind of low temperature sintered low dielectric glass ceramic material and preparation method thereof
  • A kind of low temperature sintered low dielectric glass ceramic material and preparation method thereof
  • A kind of low temperature sintered low dielectric glass ceramic material and preparation method thereof

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preparation example Construction

[0029] As mentioned above, the preparation method of low-temperature sintering low dielectric glass-ceramic composite substrate material includes the following steps:

[0030] a. According to the composition ratio requirements of the KBS glass, K 2 CO 3 , SiO 2 and H 3 BO 3 powder mixing;

[0031] b. Mix the above-mentioned mixed powder with deionized water as a solvent, wet ball milling, and then dry;

[0032] c. Melting the dried powder above at a high temperature in an air atmosphere at 1500°C to form a KBS glass frit;

[0033] d. The above-mentioned KBS glass frit was wet ball milled with deionized water as a solvent, and then dried at 100°C to obtain KBS glass powder;

[0034] e, KBS glass powder and Al which account for 50-183% by weight respectively 2 o 3 and 8.3-133% quartz sand, mixed with deionized water solvent, wet ball milling, and dried acrylic acid solution with an additive amount of 2-5% of the total mass of raw materials as a binder for granulation;

...

Embodiment 1

[0042] a. K 2 CO 3 , SiO 2 and H 3 BO 3 The powders are mixed, and their masses are 0.35g, 28g and 19.15g respectively;

[0043] b. Use deionized water as the solvent for the powder prepared in step a, wet ball mill and mix for 6 hours, dry and melt at 1500°C in the atmosphere for 1 hour at high temperature to form a KBS glass frit;

[0044] c. The KBS glass frit was wet-milled for 6 hours with deionized water as a solvent, and then dried at 100°C to obtain KBS glass powder;

[0045] d, the above KBS glass powder and 52.5g Al 2 o 3 Mixing, using deionized water solvent, mixing by wet ball milling for 8 hours, drying and granulating with an acrylic acid solution whose additive amount accounts for 2-5% of the total mass of raw materials as a binder;

[0046] e, the granules obtained by the above-mentioned granulation are dry-pressed and formed, and the forming pressure is 20Mpa;

[0047] f. Sintering the dry-pressed material in step e for 1 hour in an air atmosphere at 8...

Embodiment 2

[0055] a. K 2 CO 3 , SiO 2 and H 3 BO 3 The powders are mixed, and their masses are 0.35g, 28g and 19.15g respectively;

[0056] b. Use deionized water as the solvent for the powder prepared in step a, wet ball mill and mix for 6 hours, dry and melt at 1500°C in the atmosphere for 1 hour at high temperature to form a KBS glass frit;

[0057] c. The KBS glass frit was wet-milled for 6 hours with deionized water as a solvent, and then dried at 100°C to obtain KBS glass powder;

[0058] d, the above KBS glass powder and 26.25g Al 2 o 3 and 26.25g of quartz sand, mixed with deionized water solvent and wet ball mill for 8 hours, and after drying, the acrylic acid solution whose additive amount accounts for 2 to 5% of the total mass of raw materials is used as a binder for granulation;

[0059] e, the granules obtained by the above-mentioned granulation are dry-pressed and formed, and the forming pressure is 20Mpa;

[0060] f. Sintering the dry-pressed material in step e for...

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Abstract

The invention discloses a low temperature sintered low dielectric glass ceramic material and a preparation method thereof, wherein the low temperature sintered low dielectric glass ceramic material is composed of the following components: 30wt% to 60wt% KBS glass, 30wt% to 55wt% Al2O3 , and 5wt% to 40wt% quartz sand; the molar ratio of the KBS glass is K2O: B2O3: SiO2=x:y:z, wherein, 0.002

Description

technical field [0001] The invention belongs to the field of dielectric glass-ceramic composite substrate materials, in particular to a low-temperature sintered glass-ceramic material with low dielectric constant and low loss and a preparation method thereof. Background technique [0002] The rapid development of the modern semiconductor industry has put forward higher requirements for electronic packaging, and multilayer substrate technology has emerged as the times require. The application of low-temperature co-fired glass-ceramic (LTCC) multilayer substrate improves the signal transmission speed and wiring density, and can meet the requirements of VLSI high-density packaging. It is the key basic material of modern communication technology. It is used in portable mobile phones, TV satellite reception Devices and military radars have very important applications, and are playing an increasingly important role in the miniaturization and integration of modern communication too...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C10/00
Inventor 周晓华杨新石张玉芹孙成礼张树人
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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