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an al doped mg 2 Si-based thermoelectric thin film and preparation method thereof

A thermoelectric thin film and power supply technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of low efficiency, cumbersome process, poor controllability, etc., to reduce costs, simplify the preparation process, improve The effect of thermoelectric properties

Inactive Publication Date: 2017-10-20
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In order to solve the above problems, the present invention provides an Al-doped Mg 2 Si-based thermoelectric thin film and its preparation method, aiming to solve the existing Al-doped Mg 2 The preparation method of Si-based thermoelectric thin film has the problems of cumbersome process, low efficiency and poor controllability; while the present invention can precisely control parameters such as sputtering power and sputtering time ratio to adjust the doping amount of Al, which simplifies the preparation process and reduces Reduced costs and can meet the needs of mass production

Method used

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  • an al doped mg <sub>2</sub> Si-based thermoelectric thin film and preparation method thereof
  • an al doped mg <sub>2</sub> Si-based thermoelectric thin film and preparation method thereof
  • an al doped mg <sub>2</sub> Si-based thermoelectric thin film and preparation method thereof

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Embodiment 1

[0025] An Al-doped Mg 2 The preparation method of Si-based thermoelectric thin film, concrete steps are:

[0026] 1) Use acetone and alcohol to ultrasonically clean the glass slides for 15 minutes respectively;

[0027] 2) The double-target circular sputtering is carried out by the magnetron sputtering deposition method, in which, one target position puts Mg 2 For the Si target, use RF power as the power supply; place the Al single substance target at the other target, and use DC power as the power supply; pump the vacuum to 6.5×10 -4 Below Pa, the high-purity Ar gas with a flow rate of 30 sccm is used as the working gas, and the working pressure is 0.5 Pa; firstly, a layer of Mg is plated on the substrate 2 Si, followed by a thin layer of Al, followed by a layer of Mg 2 Si; Mg 2 The RF sputtering power of Si target is 120 W, the DC sputtering power of Al target is 30 W; the cycle is 12 times, Al and Mg 2 The sputtering time ratio of Si is 1:10, and the total sputtering ...

Embodiment 2

[0030] An Al-doped Mg 2 The preparation method of Si-based thermoelectric thin film, concrete steps are:

[0031] 1) Use acetone and alcohol to ultrasonically clean the glass slides for 15 minutes respectively;

[0032] 2) The double-target circular sputtering is carried out by the magnetron sputtering deposition method, in which, one target position puts Mg 2 For the Si target, use RF power as the power supply; place the Al single substance target at the other target, and use DC power as the power supply; pump the vacuum to 6.5×10 -4 Below Pa, the high-purity Ar gas with a flow rate of 30 sccm is used as the working gas, and the working pressure is 5.0 Pa; firstly, a layer of Mg is plated on the substrate 2 Si, followed by a thin layer of Al, followed by a layer of Mg 2 Si; Mg 2 The RF sputtering power of Si target is 120 W, the DC sputtering power of Al target is 60 W; the cycle is 12 times, Al and Mg 2 The sputtering time ratio of Si is 1:4, and the total sputtering tim...

Embodiment 3

[0035] An Al-doped Mg 2 The preparation method of Si-based thermoelectric thin film, concrete steps are:

[0036] 1) Use acetone and alcohol to ultrasonically clean the glass slides for 15 minutes respectively;

[0037] 2) The double-target circular sputtering is carried out by the magnetron sputtering deposition method, in which, one target position puts Mg 2 For the Si target, use RF power as the power supply; place the Al single substance target at the other target, and use DC power as the power supply; pump the vacuum to 6.5×10 -4 Below Pa, high-purity Ar gas with a flow rate of 30 sccm is used as the working gas, and the working pressure is 0.1Pa; firstly, a layer of Mg is plated on the substrate 2 Si, followed by a thin layer of Al, followed by a layer of Mg 2 Si; Mg 2 The RF sputtering power of Si target is 120 W, the DC sputtering power of Al target is 90 W; the cycle is 24 times, Al and Mg 2 The sputtering time ratio of Si is 1:60, and the total sputtering time ...

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Abstract

The invention discloses Al-doped Mg2Si-based thermoelectric thin film and a preparing method thereof. Under the conditions that the base vacuum degree is from 6.5*10-4 Pa to 1.0*10-5 Pa, the work gas is high-purity Ar gas and the working air pressure is 0.1-5.0 Pa, double-target cyclic sputtering is carried out on an insulating substrate by a magnetron sputtering deposition process. In one target position, an Mg2Si target is placed, and a radio frequency power supply is used as the power supply; in another target position, an Al elemental target is placed, and a direct current power supply is used as the power supply; first, an Mg2Si layer is plated, next, an Al layer is plated, and then an Mg2Si layer is plated again; and operation is cyclically carried out according to the period so as to obtain thin film with a laminated structure, and finally, the Al-doped Mg2Si-based thermoelectric thin film is obtained by adopting vacuum annealing. The magnetron sputtering process preparing technology has the advantages of simple technology, low cost and the like, and can meet the requirements of mass production.

Description

technical field [0001] The invention relates to the field of thermoelectric functional materials, in particular to an Al-doped Mg 2 Si-based thermoelectric thin film and its preparation method. Background technique [0002] With the increasingly serious energy crisis, it is urgent to actively promote and promote the use of clean renewable energy, especially the combination of new technology development and industrialization investment in renewable energy to reduce the cost of renewable energy utilization. Thermoelectric materials are green and environmentally friendly functional materials that can directly convert heat energy and electric energy; thermoelectric devices made of thermoelectric materials have small size, light weight, no mechanical rotating parts, no noise, long service life, It has the advantages of polluting the environment, and can be widely used in fields such as thermoelectric generators, thermoelectric coolers, and sensors. Therefore, the preparation of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/58
Inventor 周白杨陈志坚温翠莲郑运相
Owner FUZHOU UNIV
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