Microwave plasma chemical vapor deposition device
A chemical vapor deposition and microwave plasma technology, which is applied in the field of plasma chemical vapor deposition devices, can solve the problems of inability to systematically control the substrate temperature, affect the generation of microwave plasma, limit microwave power, etc., so as to shorten the formation time and improve the formation time. The effect of quality, accurate temperature control
Active Publication Date: 2018-05-01
WUHAN UNIV OF TECH
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Problems solved by technology
However, the existing quartz tube-type MPCVD device relies on microwave plasma as a heating source, and the input microwave power is too large to soften the quartz tube, which limits the input microwave power and cannot systematically control the temperature of the substrate, which affects the microwave plasma. generation
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[0019] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0020] The present invention improves the traditional quartz tube type MPCVD device, uses a medium frequency induction heater to systematically heat the substrate, replaces the traditional straight arm type quartz tube with a dumbbell-shaped quartz tube reaction chamber, and overcomes the traditional quartz tube type-microwave plasma chemical vapor deposition The system cannot systematically, accurately, and widely control the temperature of the substrate.
[0021] see figure 1 , a microwave plasma chemical vapor deposition device, comprising a microwave source 14, an intermediate frequency induct...
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The invention discloses a microwave plasma chemical vapor deposition device, which comprises a microwave source, an intermediate frequency induction heater and a quartz tube reaction chamber. The microwave source is connected with a rectangular waveguide for introducing microwaves; It is placed on the thin neck of the quartz tube reaction chamber, so that a microwave resonant cavity is formed between the rectangular waveguide and the thin neck of the quartz tube reaction chamber; the upper thick neck of the quartz tube reaction chamber is connected to the raw material gas source through the raw material gas inlet device; The coil of the intermediate frequency induction heater is set around the lower thick neck of the quartz tube reaction chamber; the lower thick neck of the quartz tube reaction chamber is provided with a base, and the base is connected to the thermocouple through a thick ceramic tube that can be lifted, and the thermocouple is set in turn. There are substrate base and substrate; the base is connected with the graphite platform through thin ceramic tubes. The invention can accurately and widely control the temperature of the substrate and improve the quality of microwave plasma generation.
Description
technical field [0001] The invention belongs to the technical field of chemical vapor deposition, and in particular relates to a microwave plasma chemical vapor deposition device. Background technique [0002] Plasma is an ionized gaseous substance composed of positive and negative ions produced by ionized atoms and atomic groups after partial electron deprivation. It is regarded as the fourth state of matter except solid, liquid and gas. Microwave plasma is a kind of plasma formed by using microwaves to ionize gas in a vacuum state. Under the action of ionization, a mixture of atoms, atomic groups, ions and electrons coexists. [0003] Chemical vapor deposition (Chemical Vapor Deposition, CVD for short) is an important and commonly used technology for preparing various thin film materials. This technology can be used to prepare thin films of elements and compounds on various substrates. Among various chemical vapor deposition methods of diamond films, microwave plasma chem...
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IPC IPC(8): C23C16/513
Inventor 涂溶徐伟清章嵩张联盟
Owner WUHAN UNIV OF TECH