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Semiconductor device

A semiconductor and crystal defect technology, applied in the field of diodes, can solve problems such as enlargement, and achieve the effect of suppressing oscillation

Inactive Publication Date: 2016-01-27
SANKEN ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the prior art, when the speed of the diode is increased, there is a problem that the rising slope of the waveform when the reverse current approaches the zero current value during the reverse recovery operation ( figure 1 ①) becomes larger (hard waveform), and as a result, noise called ringing occurs when the waveform converges to 0 current value

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  • Semiconductor device
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Embodiment 1

[0029] The structure of the diode of Example 1 will be described. Such as Figure 4 As shown, the diode of the present invention has a carrier trapping layer (crystal defect layer) inside the drift layer in the peripheral region (inert region) outside the depletion layer region and below the channel stopper ring.

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Abstract

The invention provides a semiconductor device, and the device can soften a current waveform during the reverse recovery of a high-speed diode. The device is locally provided with a carrier residual layer (crystallization defect layer) which generates carriers in a region of a drift layer at the outer side of a depletion layer formed during the application of a reverse voltage in a diode with a PiN-type diode structure enabling a current to flow upwards in a vertical direction. The device supplies the carriers during the switching of the layer, and generates current flow. Therefore, the carriers cannot disappear suddenly, and the device can soften the current waveform during the reverse recovery. Because the back surface of the diode is not provided with the carrier residual layer (crystallization defect layer), the device can soften the current waveform without enabling Vf to rise.

Description

technical field [0001] The present invention relates to a diode having soft switching characteristics in a current waveform during a reverse recovery operation. Background technique [0002] In recent years, switching diodes used for high-frequency rectification have been required to increase their speed. In order to increase the speed of the diode, it is necessary to shorten the life time of the carriers in the semiconductor element to shorten the reverse recovery time, and gold (Pt), platinum (Pt), etc., which function as a life control body, are sometimes introduced so that Rapidly destroy carriers. [0003] Patent Document 1: Japanese Patent Application Laid-Open No. 2-170471 Fuji Electric [0004] However, in the prior art, when the speed of the diode is increased, there is a problem that the rising slope of the waveform when the reverse current approaches the zero current value during the reverse recovery operation ( figure 1 ①) becomes large (hard waveform), and as...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/868H01L29/32
CPCH01L29/32H01L29/868
Inventor 森川直树
Owner SANKEN ELECTRIC CO LTD