High-conversion-efficiency potential-induced degradation (PID)-resisting crystalline silicon solar cell and manufacturing method thereof

Abstract

The present invention discloses a high-conversion-efficiency potential-induced degradation (PID)-resisting crystalline silicon solar cell. The solar cell comprises a silicon wafer, and is characterized in that a high refractive index silicon nitride passivation layer, a grapheme conducting layer and a low refractive index silicon nitride passivation layer, which are arranged in turn on a front face of the silicon wafer. Meanwhile, a manufacturing method of the above solar cell is also provided, and comprises the steps of selecting the silicon wafer and carrying out texturization, diffusion and post cleaning; depositing the high refractive index silicon nitride passivation layer on the front face of the silicon wafer, the refractive index being 2.2-2.3 and the film thickness being 1-10 nm; spin coating a grapheme dispersion liquid on the silicon nitride, and then carrying out follow-up drying to form the grapheme conducting layer, the thickness being 1-10 nm; depositing the low refractive index silicon nitride passivation layer on the grapheme conducting layer, the refractive index being 2.0-2.1 and the film thickness being 60-80 nm; and completing back electrode, back electric field and positive electrode printing, drying and sintering, thus to form the cell. The crystalline silicon solar cell provided by the present invention has excellent PID-resisting performance and high battery conversion efficiency.

Description

technical field [0001] The invention relates to an anti-PID solar cell, in particular to an anti-PID crystalline silicon solar cell with high conversion efficiency and a manufacturing method thereof. Background technique [0002] As early as 2005, Sunpower discovered that the PID (potential-induced degradation) phenomenon existed in crystalline silicon back-contact N-type cells after positive high voltage was applied to the module, and more and more attention was paid to the PID of crystalline silicon cells in the future. . As the PID phenomenon is known by more people, more research institutes have studied it. The study found the occurrence of PID phenomenon in p-type crystalline silicon and Na in glass + It is related to the migration from glass to battery under the action of external electric field. In order to slow down the occurrence of PID attenuation, the main way is to prevent Na ions from migrating into the silicon chip. The methods are: a. By increasing the resi...

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Problems solved by technology

[0003] The present invention aims at the technical problems of high production cost and low conversion efficiency of anti-PID crystalline silicon solar cells in the prior art, and provides a high conversion efficiency anti-PID crystalline silicon solar cell and its manufacturing method

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