Seed layer for perpendicular magnetic anisotropy (PMA) thin film

A magnetic film, anisotropic technology, applied in the direction of magnetic film, magnetic object, magnetic field controlled resistor, etc., can solve the problem of thermal stability of difficult magnetization direction

Active Publication Date: 2016-01-27
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, it is difficult to maintain good thermal stability of the magnetization direction using only the MgO interface as the source of PMA
The prior art, as taught by Girt et al. (US Patent No. 7666529) and Wang et al. (US Published Patent Application 2012 / 0141836), while addressing various aspects of interfaces between different crystal structures, did not For further discussion of the problems to be solved here

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  • Seed layer for perpendicular magnetic anisotropy (PMA) thin film
  • Seed layer for perpendicular magnetic anisotropy (PMA) thin film
  • Seed layer for perpendicular magnetic anisotropy (PMA) thin film

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Embodiment Construction

[0029] The present invention provides a method of providing enhanced perpendicular magnetic anisotropy (PMA) in a layered structure, the PMA originating from the interface between magnesium oxide and ferromagnetic layers containing iron, and passing through transition layers, such as molybdenum layers, Facilitates a smooth transition between body-centered cubic (BCC) and face-centered cubic (FCC) crystal symmetry structures.

[0030] A recent advance in the development of magnetic random access memory (MRAM) devices is the use of high-interface PMA derived from the interface of magnesium oxide and iron or iron alloys as ferromagnetic layers (Fig. 1(b)), where the iron alloy contains iron Cobalt boron, iron boron and so on. Similar to the aforementioned cobalt / nickel interface, the magnesium oxide / iron interface provides a strong and potent source of PMA (see Ikeda et al., 2010, Nature Materials Vol. 9, p. 721). This combination of materials (and its interfacial properties) is...

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Abstract

The invention discloses a method for forming a magnetic thin film structure having perpendicular magnietc anisotropy (PMA), a magnetic thin film having PMA and a tunneling reluctance device having PMA, wherein the magnetic thin film structure having PMA is a multilayered fabrication of materials having differing crystal symmetries that provides smooth transition by use of a seed layer that promotes symmetry matching. An interface between layers in the deposition, such as an interface between a layer of MgO and a Fe-containing ferromagnetic layer, is a source of perpendicular magnetic anisotropy which then propagates throughout the remainder of the deposition by means of the symmetry matching seed layer.

Description

technical field [0001] The present invention relates to a magnetic device using a thin film magnetic layer having perpendicular magnetic anisotropy (PMA), and more particularly to a seed layer for enhancing the PMA characteristics of such a device. Background technique [0002] In many of today's magnetic devices utilizing thin-film deposition, the magnetic thin film can have an in-plane (deposition plane) magnetization direction, an out-of-plane (i.e., perpendicular to the film plane) magnetization direction—this is often referred to as perpendicular magnetic anisotropy (PMA), Even magnetic thin films can have components in both directions. Such devices include, but are not limited to those listed below: [0003] (1) Various magnetic random access memories (MRAM), for example, MRAM with PMA (or partial PMA) spin torque, where the magnetic film can be used as a fixed layer, a reference layer, a free layer, or a dipole (offset compensation) layer; [0004] (2) Various PMA ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H01L43/12H01F10/32G11C11/16
CPCH01F10/3286H01F10/3236G11C11/161H10N50/01H10N50/85H10N50/10
Inventor 森山贵広王郁仁童儒颖
Owner TAIWAN SEMICON MFG CO LTD
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