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A kind of photoresist composition and preparation method thereof

A composition and photoresist technology, which is applied in the directions of optomechanical equipment, photosensitive materials for optomechanical equipment, optics, etc., can solve the problem of uneven coating of photoresist, easy shrinkage of film surface, affecting detection accuracy, etc. problems, to achieve the effect of high detection result accuracy, uniform film layer and high image resolution

Active Publication Date: 2017-05-31
BEIJING ZHONGKEZIXIN TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the existing technology, the surface of the film layer is easy to shrink after the high temperature treatment of the photoresist after post-baking, which makes the photoresist coating uneven
In this way, when applied to genome sequencing, the photoresist is coated on the chip, which will affect the detection accuracy and cause inaccurate results.

Method used

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  • A kind of photoresist composition and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (1) Take 2 parts of ethyl acetate as solvent, 16 parts of propylene glycol methyl ether acetate and 5 parts of dimethylacetamide to dissolve 2 parts of diazonaphthoquinone sulfonate, and stir evenly to obtain a photoactive substance solution;

[0022] (2) Add 1 part of citric acid to the photoactive substance solution;

[0023] (3) Heat the mixture obtained in step (2) to 45°C, add 0.4 parts of ETA-706, 4 parts of methyl 2-hydroxyethyl acrylate, 2 parts of trimethylolpropane trimethacrylate, methyl 12 parts of n-butyl acrylate and 20 parts of red pigment dispersion, mixed evenly at constant temperature;

[0024] (4) Raise the temperature to 80° C., and stir at constant temperature for two hours to remove the solvent to obtain a photoresist composition.

Embodiment 2

[0026] (1) Take 2 parts of ethyl acetate as solvent, 14 parts of propylene glycol methyl ether acetate and 4 parts of dimethylacetamide to dissolve 2 parts of diazonaphthoquinone sulfonate, and stir evenly to obtain a photoactive substance solution;

[0027] (2) Add 2 parts of citric acid to the photoactive substance solution;

[0028] (3) Heat the mixed solution obtained in step (2) to 45°C, add 0.55 parts of ETA-706, 3 parts of methyl 2-hydroxyethyl acrylate, 3 parts of trimethylolpropane trimethacrylate, methyl 10 parts of n-butyl acrylate and 21 parts of blue pigment dispersion, mixed evenly at constant temperature;

[0029] (4) Raise the temperature to 80° C., and stir at constant temperature for two hours to remove the solvent to obtain a photoresist composition.

Embodiment 3

[0031] (1) Take 2 parts of ethyl acetate as solvent, 14 parts of propylene glycol methyl ether acetate and 7 parts of dimethylacetamide to dissolve 2 parts of diazonaphthoquinone sulfonate, and stir evenly to obtain a photoactive substance solution;

[0032] (2) Add 1 part of citric acid to the photoactive substance solution;

[0033] (3) Heat the mixed liquid obtained in step (2) to 45°C, add 0.5 parts of ETA-706, 5 parts of methyl 2-hydroxyethyl acrylate, 8 parts of trimethylolpropane trimethacrylate, methyl 4 parts of n-butyl acrylate and 21 parts of yellow pigment dispersion, mixed evenly at constant temperature;

[0034] (4) Raise the temperature to 80° C., and stir at constant temperature for two hours to remove the solvent to obtain a photoresist composition.

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Abstract

The invention discloses a photoresist composition and a preparation method thereof. The composition comprises a polyether modified organosilicon flatting agent, a solvent, an optical active substance, an organic acid, resin and a pigment dispersion. The preparation method comprises the following steps: a solvent is used for dissolving photolytic active substances, a uniform stirring is carried out to obtain an optical active substance solution; organic acid is added; a heating is carried out, a polyether modified organosilicon flatting agent, resin and a pigment dispersion are added, and a uniform constant temperature mixing is carried out; a heating is carried out, an isothermal stirring is carried out for two hours for removing solvents, and the photoresist composition is obtained.

Description

technical field [0001] The invention belongs to the technical field of photoresist materials, and in particular relates to a photoresist composition and a preparation method thereof. Background technique [0002] Photoresist refers to a large class of polymer materials with photosensitive chemical action (or sensitive to electron energy), also called resist, also called photoresist. Mainly used in integrated circuits, packaging, micro-electromechanical systems, optoelectronic devices, photonic devices, flat panel displays, solar photovoltaics and other fields. After the photosensitive resin is exposed to light, the photocuring reaction can quickly occur in the exposed area, so that the physical properties of the material, especially the solubility and affinity, will change significantly. After being treated with an appropriate solvent, the soluble part is dissolved to obtain the desired image. The technology of photoresist is complicated and there are many varieties. Acco...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/027G03F7/022G03F7/004
Inventor 陈哲任鲁风殷金龙
Owner BEIJING ZHONGKEZIXIN TECH