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Three-dimensional photoelectric integrated structure and preparation method thereof

An optoelectronic integrated, three-dimensional technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of poor heat dissipation performance, complex process, poor performance of photonic chips, etc., to improve heat dissipation effect, simple process, and solve problems with poor performance. Effect

Active Publication Date: 2016-02-10
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The application provides a three-dimensional optoelectronic integrated structure and its manufacturing method, which solves the technical problems of poor performance, complex process and poor heat dissipation performance of photonic chips caused by the integration technology in the prior art

Method used

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  • Three-dimensional photoelectric integrated structure and preparation method thereof
  • Three-dimensional photoelectric integrated structure and preparation method thereof
  • Three-dimensional photoelectric integrated structure and preparation method thereof

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Embodiment 1

[0043] In order to solve the technical problems of poor performance, complex process and poor heat dissipation performance of the photonic chip caused by the integration technology in the prior art, the present application provides a three-dimensional optoelectronic integrated structure. Such as figure 1 As shown, the three-dimensional optoelectronic integrated structure includes: an optoelectronic chip, a rewiring medium, electronic devices 202 and 201, an optical fiber 108, and a substrate 401.

[0044] The optoelectronic chip includes a buried oxygen layer 104, a top layer interconnection medium 105, a top layer silicon 101, a back reflection grating 102, and photonic devices 103 and 107. The top silicon 101 is disposed between the buried oxide layer 104 and the top interconnection medium 105, the photonic devices 103 and 107 are disposed in the top silicon 101, and the photonic device pads 106 of the photonic devices 103 and 107 are disposed on the On the top-level interconne...

Embodiment 2

[0052] Based on the same inventive concept, the present application also provides a method for manufacturing a three-dimensional optoelectronic integrated structure. The manufacturing method is used for manufacturing the three-dimensional optoelectronic integrated structure in the first embodiment. Such as figure 2 As shown, the manufacturing method includes the following steps:

[0053] Step S110, such as image 3 As shown, the optoelectronic chip is obtained, and the optoelectronic chip includes a buried oxide layer 104, a top layer interconnection medium 105, a top layer silicon 101, a back reflection grating 102, and photonic devices 103 and 107. The top silicon 101 is disposed between the buried oxide layer 104 and the top interconnection medium 105, the photonic devices 103 and 107 are disposed in the top silicon 101, and the pins of the photonic devices 103 and 107 pass through the top interconnection Medium 105. A silicon substrate 109 is provided on the buried oxygen l...

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Abstract

The invention discloses a three-dimensional photoelectric integrated structure and a preparation method thereof. The three-dimensional photoelectric integrated structure comprises a photoelectronic chip, a rewiring medium, an electronic device, a substrate and an optical fiber, wherein the rewiring medium is fixed on the substrate through solder balls; and the optical fiber is coupled to the electronic device. A plurality of medium layers are arranged; interconnection metal wires are arranged in the medium layers; a mature rewiring technology is adopted; the process is simple; lead-out of input and output interfaces is achieved; and the input and output interfaces can be flexibly distributed according to the subsequent integration requirements, so that interlayer interconnection is achieved; a through-silicon via technology is avoided; and the performance of a photon chip is ensured. In addition, photoelectronic devices are arranged at the same side of interconnected medium and a base; and the photoelectronic devices are interconnected in a back-off manner, so that the transmission rate is improved; and the heat dissipation effect is improved.

Description

Technical field [0001] The invention relates to the technical field of optoelectronic integration, in particular to a three-dimensional optoelectronic integration structure and a manufacturing method thereof. Background technique [0002] Silicon-based photonic devices are compatible with complementary metal oxide semiconductor (CMOS) processes, small in size, transparent in communication bands, large bandwidth, low latency, low energy consumption, low crosstalk, and other advantages. They can be mixed or integrated with microelectronic chips. At present, silicon optoelectronic monolithic integrated circuits have achieved a high degree of integration, and modulators, as well as corresponding drivers, waveguide devices, detectors, and corresponding receiving and amplifying circuits can all achieve monolithic integration. Since silicon itself is an indirect band gap semiconductor, the luminous efficiency has not reached the high-speed traffic demand, but many methods of integrating...

Claims

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Application Information

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IPC IPC(8): H01L23/535H01L25/00H01L21/60
CPCH01L21/568H01L2224/04105H01L2224/12105H01L2224/19H01L2224/32225H01L2224/73267H01L2224/92244
Inventor 刘丰满曹立强郝虎
Owner NAT CENT FOR ADVANCED PACKAGING
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