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Quantum dot light-emitting diode capable of improving charge injection balance and preparation method thereof

A technology of quantum dot luminescence and charge injection, which is applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the inconsistent charge transmission efficiency of quantum dot light-emitting diodes, the imbalance of charge injected into the quantum dot light-emitting layer, and the low efficiency of quantum dot light-emitting diodes and other issues to maximize the recombination efficiency of electrons and holes and improve the luminous efficiency

Active Publication Date: 2018-06-19
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a quantum dot light-emitting diode and a preparation method that can improve the balance of charge injection, aiming at solving the inconsistency of the charge transmission efficiency of the existing quantum dot light-emitting diode, and the quantum dot light-emitting layer injecting charge Problems of imbalance and relatively low efficiency of quantum dot light-emitting diodes

Method used

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Embodiment Construction

[0022] The present invention provides a quantum dot light-emitting diode capable of improving charge injection balance and a preparation method. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0023] The present invention provides a quantum dot light-emitting diode capable of improving charge injection balance, which includes: an anode, a quantum dot light-emitting layer and a cathode in sequence; a hole injection layer, a hole injection layer, and a hole are also included between the anode and the quantum dot light-emitting layer. One or more layers of the transport layer and the electron blocking layer, and one or more layers of the electron injection layer, the electron transport layer, and the hole bl...

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Abstract

The invention discloses a quantum dot light-emitting diode capable of improving charge injection balance and a preparation method thereof. The present invention uses a composite material structure system composed of inorganic semiconductor materials and / or organic materials to prepare charge injection layers and / or charge transport layers and / or heterogeneous charge blocking layer material systems respectively, and adjust the inorganic semiconductor materials in each layer The ratio of materials and organic materials and the composition phase distribution state make the injection efficiency of electrons and holes injected into the quantum dot light-emitting layer consistent, the injected charge is equal, and the charge injection balance on the quantum dot light-emitting layer realizes the electrons and holes in the quantum dot light-emitting layer. The hole recombination efficiency is maximized, and the luminous efficiency of the quantum dot light-emitting diode is effectively improved.

Description

technical field [0001] The invention relates to the technical field of quantum dot light emitting diodes, in particular to a quantum dot light emitting diode capable of improving charge injection balance and a preparation method. Background technique [0002] Quantum dots can also be called semiconductor nanocrystals, which are nanocrystalline particles with a radius smaller than or close to the radius of the Bohr excitons. It is composed of a small number of atoms or atomic groups, and its particle size is generally between 1-20nm. The conduction band electrons, valence band holes, and excitons of quantum dots are bound in three spatial directions. Since the electrons and holes are quantum-confined, the continuous energy band structure becomes a discrete energy level structure with molecular characteristics. Fluorescence can be emitted after excitation, and quantum dots have unique luminescence characteristics, making them have broad application prospects in the field of o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50
CPCH10K50/115H10K50/15H10K50/16H10K50/17H10K50/171H10K50/18
Inventor 李雪付东
Owner TCL CORPORATION