Wafer chuck cleaning system used for lithography machine and cleaning method thereof

Abstract

The invention relates to a wafer chuck cleaning system used for a lithography machine and a cleaning method thereof. According to the invention, the system at least comprises a spraying head located in a sealed chamber, when the wafer chuck needs to be cleaned by the spraying head, low-temperature spray is provided for the surface of the wafer chuck; the low-temperature spray is formed by particles in certain mass, which have certain speed and can be collided with pollutants on the surface of the wafer chuck, so that the pollutants are separated from the surface of the chuck; and meanwhile, an exhausting device is used for exhausting the sealed chamber and the pollutants are brought out of the sealed cavity. New pollutants are not introduced in the process and the low-temperature sprayed mist does not cause damages to the surface of the wafer chuck.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a wafer chuck cleaning system and cleaning method for a photolithography machine. Background technique [0002] During the use of the wafer chuck in the existing lithography machine, there may be pollutants on the surface, which will cause the surface of the wafer supported by it to protrude or tilt. During the exposure process, the local graphics will be lost due to defocusing. Fidelity, but also due to the local distortion of the wafer, the alignment of the current layer pattern and the previous layer pattern will deviate, which will eventually lead to the loss of yield. [0003] In order to remove the pollutants on the surface of the wafer chuck, some solutions have been proposed in the prior art. For example, open the closed chamber where the wafer chuck is located, move the chuck platform where the chuck is located out of the chamber and use a grinding stone to remov...

AI Technical Summary

Problems solved by technology

For example, open the closed chamber where the wafer chuck is located, move the chuck platform where the chuck is located out of the chamber and use a grinding stone to remove pollutants, which will destroy the closed chamber environment, and is very time-consuming and labor-intensive; or use photolithography The built-in grinding stone of the machine grinds the surface of the wafer chuck without moving the chuck platform out of the chamber

Both of these methods use high-hardness grinding stones to remove pollutants through direct physical friction. Long-term use will cause physical wear on the wafer chuck, and the grinding stone itself will also be worn out and sticky, affecting the Grinding effect, even bring secondary pollution

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