pmu pump structure and its formation method
A pumping and barrier layer technology, applied in electrical components, electrical solid devices, circuits, etc., to avoid voltage drop, improve performance, and improve the effect of electrical isolation
Active Publication Date: 2018-03-30
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
[0006] The purpose of the present invention is to provide a PMU pumping structure and its forming method, which can improve the problem that the PMU pumping structure is prone to leakage current in the prior art
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[0039] The PMU pumping structure of the present invention and its forming method will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is represented, and it should be understood that those skilled in the art can modify the present invention described herein while still implementing the present invention Beneficial effects of the invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.
[0040] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the develop...
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The invention discloses a PMU pumping structure and a forming method thereof. The structure includes a mirror-symmetrical first part and a second part, and the first part includes: a semiconductor substrate; an epitaxial layer formed on the semiconductor substrate; a first barrier layer formed in the epitaxial layer; A functional layer on the epitaxial layer, the functional layer includes a first P+ region, a first N+ region, a second P+ region and a second N+ region arranged from far to near from the second part; and the functional layer is located on the functional layer A metal interconnection layer, the metal interconnection layer makes the first N+ region and the second P+ region have the same potential; an epitaxial layer is formed between the first barrier layer and the functional layer. By making the first N+ region and the second P+ region have the same potential, the voltage drop between the first N+ region and the second P+ region is avoided, and the generation of leakage current between the epitaxial layer, the first barrier layer and the semiconductor substrate is prevented.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a PMU pumping structure and a forming method thereof. Background technique [0002] In the power management unit charger chips (PMUcharger chips), including the current mirror (current mirror) and the PMU pump (pump) structure, the function of the PMU pump structure often declines, which will further cause The function of the current mirror is degraded, for example, the delay becomes higher. [0003] figure 1 It is a structural schematic diagram of a PMU pumping structure in the prior art. Such as figure 1 As shown, the conventional PMU pumping structure includes a first part 101 and a second part 102, and the first part 101 and the second part 102 are mirror-symmetrical. Taking the first part 101 as an example, it includes a substrate 1, an epitaxial layer 2 formed on the substrate 1, and a high voltage N type buried layer (HighVoltage N type buried layer, HVBN) 3, N ...
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IPC IPC(8): H01L23/473H01L21/02
Inventor 林杰张冠杰
Owner SEMICON MFG INT (SHANGHAI) CORP