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N-surface electrode-sinking reversed polarity AlGaInP light emitting diode chip

A technology of light-emitting diodes and surface electrodes, applied in circuits, electrical components, semiconductor devices, etc., to achieve significant cost-effective advantages, easy integration, and improved current expansion capabilities

Inactive Publication Date: 2016-03-02
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] Aiming at the problem that the light extraction efficiency and current spreading efficiency of the existing AlGaInP light-emitting diode chips need to be further improved, the present invention provides a method that can eliminate the blocking and light absorption of the GaAs contact layer on the top of the window layer, and further improve the light extraction efficiency and the current spreading efficiency. Reverse-polarity AlGaInP light-emitting diode chips with sunken n-side electrodes

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  • N-surface electrode-sinking reversed polarity AlGaInP light emitting diode chip

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Embodiment Construction

[0031] Such as figure 1As shown, the anti-polarity AlGaInP light-emitting diode chip with the n-side electrode sunken in the present invention includes a p-side electrode 1, a substrate 2, a bonding layer 3, a reflector layer 4, an insulating layer 5, a p-side electrode 1, a substrate 2, and a p type current spreading layer 6, p-type semiconductor layer 7, active light-emitting region 8, n-type semiconductor layer 9, n-type current spreading layer 10, window layer 11 and n-face electrode 12, and n-pad 13 is arranged on the window layer 11 . The p-side electrode 1 is prepared on the back side of the substrate 2 . Openings are distributed on the insulating layer 5, and the reflector layer 4 is in contact with the p-type current spreading layer 6 through the openings on the insulating layer (the material of the reflecting mirror layer 4 fills the openings in the insulating layer, and expands with the p-type current Layer 6 contact), taking into account the ohmic contact with th...

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Abstract

An n-surface electrode-sinking reversed polarity AlGaInP light emitting diode chip successively comprises a p-surface electrode, a substrate, a bonding layer, a reflecting mirror layer, an insulating layer, a p-type current extension layer, a p-type semiconductor layer, an active luminescence area, a n-type semiconductor layer, a n-type current extension layer, a window layer, an n-surface electrode and an n-surface bonding pad. The p-surface electrode is made on a bottom surface of the substrate. Holes are distributed on the insulating layer. The reflecting mirror layer is contacted with the p-type current extension layer through the holes on the insulating layer. The active luminescence area is a structure of multiple quantum wells or multiple heterojunctions. The window layer is provided with a hole which reaches an upper surface of the n-type current extension layer. The n-surface electrode is arranged on the upper surface of the n-type current extension layer and is arranged in the hole of the window layer. By using the chip, light absorption of an n-surface GaAs ohm contact interface of an AlGaInP-based LED window layer can be avoided; light extraction efficiency is greatly increased and a current expansion capability of a device is greatly improved.

Description

technical field [0001] The invention relates to a reverse polarity AlGaInP light-emitting diode with sunken n-surface electrodes, belonging to the technical field of light-emitting diodes. Background technique [0002] In the 1950s, III-V semiconductors represented by GaAs rose rapidly in the field of semiconductor light emitting. Later, with the emergence of metal oxide chemical vapor deposition (MOCVD) technology, the growth of high-quality III-V semiconductors broke through the technical barrier, and semiconductor light-emitting diode devices with various wavelengths flooded into the market one after another. Compared with the current light-emitting devices, semiconductor light-emitting diodes have the characteristics of high theoretical efficiency, long life, and mechanical shock resistance, and are regarded as a new generation of lighting devices worldwide. However, due to the generally high refractive index of III-V semiconductors (GaP: 3.2, GaN: 2.4), this leads to t...

Claims

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Application Information

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IPC IPC(8): H01L33/38
Inventor 左致远夏伟徐现刚
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS