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Compound semiconductor device and method for controlling same

A control method and semiconductor technology, which is applied in the direction of semiconductor devices, transistors, electrical components, etc., can solve the problems of low threshold voltage, difficulty in practical application, inability to use gate drive circuits, etc., and achieve the effect of saving space

Inactive Publication Date: 2016-03-02
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] When using normally-on field effect transistors in semiconductor devices, various problems occur, such as the inability to use existing gate drive circuits.
However, the normally-off GaN device has a very low threshold voltage, so the possibility of malfunction is high, and it is difficult to realize practical application.

Method used

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  • Compound semiconductor device and method for controlling same
  • Compound semiconductor device and method for controlling same
  • Compound semiconductor device and method for controlling same

Examples

Experimental program
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Effect test

Embodiment approach 1

[0035] image 3 It is a circuit diagram showing a schematic configuration of the compound semiconductor device of the present embodiment.

[0036] The composite semiconductor device 10 includes a GaN device (first field effect transistor) 1 and a Si-FET (second field effect transistor) 2 . Si-FET2 incorporates body diode 2d parasitic on Si-FET2.

[0037] The drain of GaN device 1 is connected to the high level side of power supply 3 . The source of the GaN device 1 is connected to the drain of the Si-FET 2 . The source of the Si-FET 2 is connected to the low-level side of the power supply 3 . That is, the composite semiconductor device 10 is formed by cascode-connecting (serially connecting) the GaN device 1 and the Si-FET 2 .

[0038] GaN device 1 includes Group III nitride semiconductors (compound semiconductors) typified by GaN, AlGaN, InGaN, and the like. Thus, the GaN device 1 as a normally-on field effect transistor can be realized. Also, a GaN device 1 with high w...

Embodiment approach 2

[0054] Figure 4 It is a timing chart comparing the waveform of the control signal applied to the gate of the GaN device and the waveform of the control signal applied to the gate of the Si-FET in this embodiment.

[0055] Here, a specific method of making the timing of turning on the Si-FET 2 earlier than the timing of turning on of the GaN device will be described. In addition, a specific method of making the timing of the GaN device non-conductive earlier than the timing of the Si-FET 2 non-conductive will be described here.

[0056] The control signal applied to the gate of GaN device 1 is delayed. At this time, for example, the timing at which the control signal applied to the gate of the GaN device 1 starts to rise is when the control signal applied to the gate of the Si-FET2 exceeds the operating threshold voltage Si-FET-Vth of the Si-FET2. time. The delay time is Figure 4 where is the delay time A. As a method of delaying the control signal applied to the gate of...

Embodiment approach 3

[0067] The composite semiconductor device of the present embodiment is the same as the above-mentioned respective embodiments except that the Si-FET 2 of the vertical structure is used. Si-FET2 has a first main surface and a second main surface. A gate electrode having a gate potential and a drain electrode having a drain potential are formed on the first main surface. A source electrode having a source potential is formed on the second main surface.

[0068] The GaN device 1 has a lateral structure as described above, and a gate electrode, a source electrode and a drain electrode are all formed on the first main surface. Therefore, no electrodes are formed on the second main surface of GaN device 1 .

[0069] refer to Figure 5 to Figure 7 A specific structure of the compound semiconductor device 100 as the compound semiconductor device of the present embodiment will be described. Figure 5 and Image 6 It is a plan view and a side view of the composite semiconductor dev...

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Abstract

Provided are a compound semiconductor device and a method for controlling same, whereby space reduction is possible. By an Si-FET (2) being connected first, and a GaN device (1) being connected after the connection of the Si-FET (2), a compound semiconductor device (10) is connected.

Description

technical field [0001] The invention relates to a composite semiconductor device formed by connecting a first field effect transistor and a second field effect transistor in series and a control method thereof. The invention particularly relates to a composite semiconductor device and a control method thereof formed by connecting a GaN (gallium nitride) device and a Si-FET in a cascode manner. Background technique [0002] Current semiconductor devices mainly use Si (silicon) type normally off-type field effect transistors (so-called Si-FETs). A normally-off field effect transistor is a transistor that conducts when a positive voltage is applied between the gate and the source, and becomes non-conducting when a positive voltage is not applied between the gate and the source. [0003] On the other hand, Si-FET is approaching its limit in physical performance. Therefore, research and development are being carried out to realize the practical use of semiconductor devices usin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/08H03K17/10H03K17/687
CPCH03K17/08142H03K17/102H03K17/6871
Inventor 池谷直泰仲嶋明生印南航介
Owner SHARP KK
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