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An electrostatic protection circuit and integrated circuit

An electrostatic protection and circuit technology, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of weak anti-static ability, achieve the effect of improving anti-static level, reducing voltage drop, and improving discharge capacity

Active Publication Date: 2018-11-13
WUXI ZGMICRO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in the prior art, due to the high voltage drop V, the ability to resist static electricity is weak

Method used

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  • An electrostatic protection circuit and integrated circuit
  • An electrostatic protection circuit and integrated circuit
  • An electrostatic protection circuit and integrated circuit

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Embodiment Construction

[0026] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments.

[0027] In the embodiment of the present invention, in the GGNMOS structure, N-well implantation is added to the drain of the NMOS transistor, and P+ implantation is performed in the N-well implantation to realize the thyristor structure; and the second active region and the drain end of the NMOS transistor are removed. The connection of the input and output pins of the protected chip; and increase the buried layer to completely isolate the P well from the substrate; to reduce the voltage drop on the device after the ESD channel is triggered, thereby ...

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Abstract

The invention provides an electrostatic protection circuit, which includes: a substrate; a well region composed of a first well region and a second well region; and an active region composed of a first active region, a second active region and a third active region. a source region; a substrate contact region composed of a first substrate contact region and a second substrate contact region; and a first gate composed of a first gate oxide layer. In the present invention, in the GGNMOS structure, an N-well is added to the drain of the NMOS tube and P+ is injected into the N-well to realize the thyristor structure; and the second active area and the passive area in the drain end of the NMOS tube are removed. Protect the connection of the input and output pins of the chip; and add a buried layer to completely isolate the P-well from the substrate; to reduce the voltage drop on the device after the ESD path is triggered, thereby improving the discharge capability of the ESD device and improving anti-static level.

Description

technical field [0001] The invention relates to the technical field of integrated circuit design in the field of microelectronics, in particular to an electrostatic protection circuit and an integrated circuit. Background technique [0002] In chip design, electrostatic protection is a problem that must be solved related to the reliability of the chip; as the requirements for electrostatic protection increase, it is necessary to continuously optimize the ESD (Electro-Static discharge) protection device on the chip that is responsible for electrostatic discharge. [0003] The classic ESD structure in the prior art is a large-sized NMOS device GGNMOS (Gate-grounded NMOS) whose gate is grounded or the gate is grounded through a resistor R. Static high current. Its cross section is as figure 1 The shown G is connected to the ground potential pin of the protected chip, and the input-output pin IO (Input-Output) of the protected chip, and IO is a pin whose working voltage of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L27/07
CPCH01L27/0262H01L27/0705
Inventor 尹航田文博王钊
Owner WUXI ZGMICRO ELECTRONICS CO LTD