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A kind of preparation method of perovskite/oxide film electrode

An oxide thin film, perovskite technology, applied in semiconductor/solid state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problems of pinholes, incomplete surface coverage of lead halide, affecting the morphology of perovskite films, etc. The effect of low cost, tight integration and simple operation

Active Publication Date: 2017-09-29
HUBEI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the spin-coating process will lead to incomplete coverage of the lead halide on the surface of the oxide and pinholes, which will affect the morphology of the perovskite film in the second step, thereby affecting the conversion efficiency of the perovskite solar cell.

Method used

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  • A kind of preparation method of perovskite/oxide film electrode
  • A kind of preparation method of perovskite/oxide film electrode
  • A kind of preparation method of perovskite/oxide film electrode

Examples

Experimental program
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Effect test

Embodiment 1

[0034] (1) Preparation of TiO on conductive glass FTO 2 Thin film (FTO / TiO 2 ), the specific method can refer to the method provided in the literature "Pellet N, Gao P, Gregori G, et al. Angew. Chem. Int. Ed. 2014, 53:1-8", so I won't go into details here.

[0035] (2) PbI 2 The saturated solution of dimethylformamide was added dropwise to absolute ethanol at 2-4°C under stirring, the resulting precipitate was centrifuged, washed once with ethanol and then centrifuged.

[0036] (3) Take a certain amount of PbI 2 The particles are dispersed in toluene to form a 2mg / ml suspension.

[0037] (4) to PbI in (3) 2 Add 0.4 mg / ml oleylamine to the suspension, and ultrasonically disperse for 5 minutes.

[0038] (5) Combine FTO / TiO 2 The membrane and another piece of FTO glass are placed in parallel into the dispersed PbI in (4) 2 In the suspension, the distance is 0.5cm, using a constant voltage of 80V, electrophoresis for 10s, washing with toluene to remove oleylamine, drying at...

Embodiment 2

[0042] (1) ZnO thin film (FTO / ZnO) was prepared on conductive glass FTO. For specific methods, please refer to the literature "Liu, D, Kelly, T L. Nat. Photon. 2014, 8: 133-138.", so I won't go into details here.

[0043] (2) PbBr 2 The saturated solution of dimethylformamide was added dropwise to absolute ethanol at 2-4°C under stirring, the resulting precipitate was centrifuged, washed once with ethanol and then centrifuged.

[0044] (3) Take a certain amount of PbBr 2 The particles are dispersed in toluene to form a 1mg / ml suspension.

[0045] (4) PbBr in (3) 2 Add 0.2 mg / ml oleylamine to the suspension, and ultrasonically disperse for 5 minutes.

[0046] (5) Put the FTO / ZnO film and another piece of FTO glass in parallel into the PbBr dispersed in (4) 2 In the suspension, the distance is 0.5cm, using a constant voltage of 70V, electrophoresis for 15s, washing with toluene to remove oleylamine, drying at 80°C, and obtaining a lead bromide film on FTO / ZnO.

[0047] (6)...

Embodiment 3

[0050] (1) ZnO thin film (FTO / ZnO) was prepared on conductive glass FTO.

[0051] (2) PbCl 2 The saturated solution of dimethylformamide was added dropwise to absolute ethanol at 2-4°C under stirring, the resulting precipitate was centrifuged, washed once with ethanol and then centrifuged.

[0052] (3) Take a certain amount of PbCl 2 The particles were dispersed in toluene to form a 3mg / ml suspension.

[0053] (4) PbCl in (3) 2 Add 0.8 mg / ml oleylamine to the suspension, and ultrasonically disperse for 5 minutes.

[0054] (5) Put the FTO / ZnO film and another piece of FTO glass in parallel into the PbCl dispersed in (4) 2 In the suspension, the distance is 0.5cm, using a constant voltage of 90V, electrophoresis for 5s, washing with toluene to remove oleylamine, drying at 80°C, and obtaining a lead chloride film on FTO / ZnO.

[0055] (6) the lead chloride oxide thin film that obtains in (5) is immersed in the CH that concentration is 8mg / ml 3 NH 3 Soak in Cl in isopropanol...

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Abstract

The invention belongs to the technical field of solar cells, and specifically discloses a method for preparing a perovskite / oxide film electrode. The main steps are: firstly prepare lead halide particles, make lead halide suspension, and then deposit lead halide by electrophoresis On the conductive substrate coated with semiconductor oxide, the conductive substrate deposited with lead halide is dipped into the solution of potassium halide ammonium to self-assemble to prepare perovskite / oxide film electrode. The invention has beneficial effects: the invention is easy to operate, does not require special equipment and reagents, and the prepared perovskite film is continuous, uniform and dense on the oxide, and can be used as a photoanode of a perovskite solar cell.

Description

technical field [0001] The invention belongs to the field of solar cells, further belongs to the technical field of electrodes in solar cells, and specifically relates to a preparation method of a perovskite / oxide thin film electrode. Background technique [0002] With the continuous consumption of fossil energy and the increasingly serious environmental problems caused by it, coupled with the continuous growth of human energy demand, the study of solar cells is of great significance and is imperative. [0003] As a solar cell material, perovskite has received widespread attention in recent years and is considered to be a promising star solar cell material. Among them, the perovskite is an organic lead halide with the structure of ABX 3 (A:CH 3 NH 3 + ;B:Pb 2+ ;X:I – , Br – or Cl – ), responsible for the absorption of sunlight and the generation of photoelectrons. The preparation of perovskite / oxide thin film electrodes is the core step in making perovskite solar ce...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00H01L51/42H01L51/44H10K99/00
CPCH10K71/10H10K71/60H10K30/81H10K30/30Y02E10/549
Inventor 舒婷
Owner HUBEI UNIV OF SCI & TECH