High-performance direct-current zinc oxide varistor and preparation process thereof
A technology of zinc oxide resistance chip and preparation process, which is applied in the direction of resistance manufacturing, resistors, varistors, etc., which can solve problems such as thermal collapse, overvoltage and overcurrent load, etc., to suppress volatilization, improve aging life, and improve stability Effect
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Embodiment 1
[0020] The invention provides a high-performance DC zinc oxide resistor and a preparation process thereof, comprising the following steps:
[0021] (1) Weigh ZnO93.49mol and Bi respectively 2 o 3 0.9mol, Sb 2 o 3 1mol, Co 2 o 3 0.5mol, SiO 2 0.6mol, MnO 2 0.6mol, Cr 2 o 3 1.5mol, NiO0.2mol, B 2 o 3 0.4mol, Al(NO 3 ) 3 9HO0.06mol, V 2 o 5 0.5mol, CeO 2 0.05mol, silver glass powder 0.2mol, mix well;
[0022] (2) Ball milling in a high-energy ball mill for 5 hours, drying at 90° C. in a blast dryer for 12 hours, and granulating the dry powder with an aqueous solution of polyvinyl alcohol to obtain a resistor powder;
[0023] (3) Under the action of a tablet press, the powder is dry-pressed to make a resistor blank;
[0024] (4) Cover the bismuth-containing oxide on the surface of the resistor sheet blank and carry out high-temperature firing at 1100 ° C for 2.5 hours;
[0025] (5) By spraying Bi 2 o 3 The slurry is evenly coated on the end face of the resistan...
Embodiment 2
[0029] The invention provides a high-performance DC zinc oxide resistor and a preparation process thereof, comprising the following steps:
[0030] (1) Weigh ZnO94.77mol and Bi respectively 2 o 3 0.7mol, Sb 2 o 3 1mol, Co 2 o 3 0.7mol, SiO 2 0.5mol, MnO 2 0.5mol, Cr 2 o 3 0.5mol, NiO0.4mol, B 2 o 3 0.2mol, Al(NO 3 ) 3 9HO0.06mol, V 2 o 5 0.3mol, CeO 2 0.07mol, silver glass powder 0.3mol, mix well;
[0031] (2) Ball milling in a high-energy ball mill for 5 hours, drying at 90° C. in a blast dryer for 12 hours, and granulating the dry powder with an aqueous solution of polyvinyl alcohol to obtain a resistor powder;
[0032] (3) Under the action of a tablet press, the powder is dry-pressed to make a resistor blank;
[0033] (4) Cover the bismuth-containing oxide on the surface of the resistor sheet blank and carry out high-temperature firing at 1050 ° C for 3 hours;
[0034] (5) By spraying Bi 2 o 3 The slurry is evenly coated on the end face of the resistance...
Embodiment 3
[0038] The invention provides a high-performance DC zinc oxide resistor and a preparation process thereof, comprising the following steps:
[0039] (1) Weigh ZnO93.94mol and Bi respectively 2 o 3 0.5mol, Sb 2 o 3 1mol, Co 2 o 3 0.8mol, SiO 2 0.4mol, MnO 20.5mol, Cr 2 o 3 1mol, NiO0.6mol, B 2 o 3 0.3mol, Al(NO 3 ) 3 9HO0.06mol, V 2 o 5 0.4mol, CeO 2 0.1mol, silver glass powder 0.4mol, mix well;
[0040] (2) Ball milling in a high-energy ball mill for 5 hours, drying at 90° C. in a blast dryer for 12 hours, and granulating the dry powder with an aqueous solution of polyvinyl alcohol to obtain a resistor powder;
[0041] (3) Under the action of a tablet press, the powder is dry-pressed to make a resistor blank;
[0042] (4) Cover the bismuth-containing oxide on the surface of the resistor sheet blank and carry out high-temperature firing for 4 hours at 1150 ° C;
[0043] (5) By spraying Bi 2 o 3 The slurry is evenly coated on the end surface of the resistance ...
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