Component For Plasma Processing Apparatus, And Manufacturing Method Therefor

A plasma and manufacturing method technology, applied in the manufacture of discharge tubes/lamps, cold cathodes, electrode systems, etc., can solve problems such as film consumption

Active Publication Date: 2016-03-23
TOKYO ELECTRON LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the coating made of yttrium oxide is consumed

Method used

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  • Component For Plasma Processing Apparatus, And Manufacturing Method Therefor
  • Component For Plasma Processing Apparatus, And Manufacturing Method Therefor
  • Component For Plasma Processing Apparatus, And Manufacturing Method Therefor

Examples

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Embodiment Construction

[0040] Various embodiments will be described in detail below with reference to the drawings. However, in each drawing, the same code|symbol is attached|subjected to the same or corresponding part.

[0041] First, an example of a plasma processing apparatus to which a member having a plasma-resistant coating according to each embodiment is applied will be described. figure 1 It is a figure which shows an example of a plasma processing apparatus. figure 1 The illustrated plasma processing apparatus 10 is a capacitively coupled plasma etching apparatus and includes a processing container 12 . The processing container 12 has a substantially cylindrical shape. The processing container 12 is made of, for example, aluminum, and its inner wall surface is anodized. The processing vessel 12 is securely grounded.

[0042] A substantially cylindrical support portion 14 is provided on the bottom of the processing container 12 . The support portion 14 is made of, for example, an insula...

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PUM

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Abstract

Particle generation can be suppressed from a thermally sprayed film of yttrium fluoride. A component exposed to plasma in a plasma processing apparatus is provided. The component includes a base and a film. The base is made of aluminum or an aluminum alloy, and an alumite film may be formed on a surface of the base. The film is formed by thermally spraying yttrium fluoride on a surface of the base or on a surface of an underlying layer including a layer provided on the base. A porosity of the film is 4% or less, and an arithmetic mean roughness of a surface of the film is 4.5 [mu]m or less.

Description

technical field [0001] Embodiments of the present invention relate to a component for a plasma processing apparatus and a method of manufacturing the component. Background technique [0002] In the manufacture of electronic devices such as semiconductor devices, plasma etching is applied to an object to be processed. Accompanying the miniaturization of electronic devices, the precision required for plasma etching is increasing year by year. In order to achieve higher precision in plasma etching, it is necessary to suppress the generation of fine particles. [0003] A processing container of a plasma processing apparatus used in such plasma etching is made of metal such as aluminum. The inner wall surface of the processing container is exposed to plasma. Therefore, in the plasma processing apparatus, a plasma-resistant film is provided along the inner wall of the processing container. As such a film, a film made of yttrium oxide is generally used. [0004] When the film ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01J9/00
CPCC23C4/02C23C28/042C23C4/11C23C4/131C23C4/01C23C4/06C23C4/134
Inventor 长山将之三桥康至虻川志向永井正也金泽义典仁矢铁也
Owner TOKYO ELECTRON LTD
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