Semiconductor device and forming method thereof

Abstract

Provided are a semiconductor device and a forming method thereof. The forming method of the semiconductor device comprises steps of: providing a substrate on the surface of which a pseudo gate structure is formed; forming doped regions in the substrate on both sides of the pseudo gate structure; forming an interlayer dielectric layer covering the surfaces of the doped regions and the surface of the pseudo gate structure, wherein the top surface of the interlayer dielectric layer is aligned with that of the pseudo gate structure; etching and removing the pseudo gate structure and the substrate with a certain thickness under the pseudo gate structure, and forming a channel in the substrate; filling the channel with a channel stress layer the material of which is insulated material and the top surface of which is lower than the surface of the substrate; forming an intrinsic layer on the surface of the channel stress layer and fully filling the channel with the intrinsic layer; and forming a gate structure on the surface of the intrinsic layer. While increasing the carrier mobility of the semiconductor device, the semiconductor device forming method inhibits a short-channel effect and a source-drain punchthrough problem and optimizes the electric performance and the reliability of the semiconductor device.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] With the continuous development of semiconductor technology, carrier mobility enhancement technology has been widely studied and applied. Improving the carrier mobility in the channel region can increase the driving current of semiconductor devices and improve the performance of devices. [0003] In the existing manufacturing process of semiconductor devices, since stress can change the energy gap and carrier mobility of silicon materials, it has become more and more common means to improve the performance of semiconductor devices through stress. Specifically, by properly controlling the stress, the mobility of carriers (electrons in NMOS devices, holes in PMOS devices) can be increased, thereby increasing the driving current, thereby greatly improving the performance of...

AI Technical Summary

Problems solved by technology

[0005] However, in practical applications, it has been found that the degree of improvement in carrier mobility of semiconductor devices formed by existing technologies is limited, which is not enough to meet the needs of increasing the operating speed of semiconductor devices, and there are problems such as lowering of the drain induction barrier and leakage current.

Images