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Crucible assembly for controlling oxygen and related methods

A crucible and cylinder technology, applied in the field of systems with defects or dislocations, can solve the problem that the system is not completely satisfactory

Active Publication Date: 2016-03-30
协鑫新(上海)光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing systems for achieving this goal are not entirely satisfactory

Method used

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  • Crucible assembly for controlling oxygen and related methods
  • Crucible assembly for controlling oxygen and related methods
  • Crucible assembly for controlling oxygen and related methods

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Embodiment Construction

[0019] Reference figure 1 , The crystal growth system is shown schematically and generally indicated as 100. Note that many parts of the system are omitted for clarity, especially the furnace or puller enclosure, the insulation layer and the susceptor support mechanism. The crystal growth system 100 can be used to produce single crystal ingots by the pulling method.

[0020] As discussed in this article, the system is described with respect to the continuous pulling method for producing single crystal ingots, although batch methods can be used. However, the system disclosed herein can also be used to produce polycrystalline ingots, for example, by a directional solidification process.

[0021] The crystal growth system 100 includes a crucible support or susceptor 150 supporting a crucible assembly 200 that contains a silicon melt 112 from which an ingot 114 is being pulled by a puller 134 such as a cable. During the crystal pulling process, the seed crystal 132 is lowered by the ...

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PUM

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Abstract

A system for growing a crystal ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base with a top surface and a first sidewall that form a first cavity. The second crucible is disposed within the first cavity of the first crucible, and has a second base and a second sidewall that form a second cavity. The second base has a bottom surface that is shaped to allow the second base to rest against the top surface of the first base. The second crucible includes a crucible passageway to allow movement of the melt therethrough. The weir is disposed inward from the second sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir.

Description

[0001] cross reference [0002] This application claims the priority of the U.S. Non-Provisional Application Serial No. 13 / 837,092 filed on March 15, 2013 and the Non-Provisional Application Serial No. 13 / 804,585 filed on March 14, 2013, all of which have been disclosed. Reference is incorporated in this article. Technical field [0003] The present invention generally relates to systems and methods for producing crystal ingots of semiconductor or solar materials, and more particularly to systems and methods for reducing defects or dislocations in crystal ingots. Background technique [0004] In the production of single crystal silicon grown by the Czochralski (CZ) method, polycrystalline silicon is first melted in a crucible such as a quartz crucible of a crystal pulling device to form a silicon melt. The puller then lowers the seed crystal into the melt and slowly raises the seed crystal from the melt, thereby solidifying the melt on the seed crystal. In order to use this method...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/12C30B29/06
CPCC30B15/12C30B29/06
Inventor S·L·金贝尔S·J·弗尔古森T·N·斯瓦米纳坦S·塞佩达J·D·希尔克J·C·侯泽B·M·迈耶J·D·霍尔德
Owner 协鑫新(上海)光伏科技有限公司