A constant-temperature large-scale preparing method of belt-shaped black phosphorus

Abstract

The invention discloses a constant-temperature large-scale preparing method of belt-shaped black phosphorus to prepare the black phosphorus in a constant-temperature manner. Cheap red phosphorus, tin and iodine are adopted as raw materials and subjected to a solid-phase reaction at a constant temperature under a low pressure to prepare the pure-phase belt-shaped black phosphorus. The method is simple in steps and high in operability. The method is advantageous in that 1) the adopted raw materials are nontoxic so that the method is clean and environmental friendly, 2) tin tetraiodide is replaced by the iodine, thus greatly reducing a cost, 3) the conversion ratio of the black phosphorus is high, and 4) black phosphorus growth is performed with a muffle furnace in place of a tube furnace, so that the yield of the black phosphorus is greatly increased, a single-pass black phosphorus yield only depends on the volume of the muffle furnace, and the single-pass yield is increased by at least 10 times or above than a single-pass yield when black phosphorus growth is performed in a tube furnace. The prepared belt-shaped black phosphorus is characterized in that crystallinity is good, and thin-layer black phosphorus with a large area can be stripped mechanically more easily. The method provides great convenience for subsequent preparation and applications of photoelectric devices based on the black phosphorus.

Description

technical field [0001] The invention relates to the field of synthesis of chemical materials, in particular to a method for constant temperature and large-scale preparation of strip-shaped black phosphorus. technical background [0002] Graphene-like two-dimensional semiconductor materials are expected to replace the traditional semiconductor silicon due to their high conductivity, high toughness and large specific surface area, triggering a new round of revolution in the field of electronic technology. However, since graphene has no energy band structure, it cannot realize the on and off of logic circuits, which greatly limits its application in the fields of electronic devices and optoelectronic devices, such as photodetectors, solar cells, field effect transistors, etc. In recent years, searching for new two-dimensional semiconductor materials has become one of the important research fields of materials science. [0003] Black phosphorus is the most dense (2.69g / cm3) of ...

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Problems solved by technology

Recently, also have article report to prepare black phosphorus with red phosphorus, tinned gold, tin tetraiodide as raw material, but the cost of gold and tin tetraiodide in the raw material used is extremely high, and tin tetraiodide also needs to be prepared in advance, greatly improves The cost of preparation is reduced, and the process is cumbersome. Now the unit price of black phosphorus sold commercially is as high as 600 euros / gram

On the other hand, because the preparation method reported above requires a temperature gradient and the preparation equipment is a tube furnace, the output of black phosphorus is greatly limited, and large-scale mass production cannot be realized.

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