Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for preparing flexible AZO thin film

A thin film and flexible technology, which is applied in the field of preparing flexible AZO films, can solve the problems of flexible substrate deformation, affecting film quality, substrate heating, etc., and achieve the effects of good film compactness, easy crystallization and growth, and temperature rise avoidance

Inactive Publication Date: 2016-04-13
TRIUMPH PHOTOVOLTAIC MATERIAL CO LTD +2
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, when the traditional magnetron sputtering device is used for the preparation of AZO thin films, the substrate and the target are set opposite to each other. During sputtering, the high-energy particles on the target will cause ion damage to the deposited film, and the high-energy particles bombard It will cause the substrate to heat up, especially when depositing a thin film on a flexible material, which will cause deformation of the flexible substrate and affect the quality of the film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing flexible AZO thin film
  • Method for preparing flexible AZO thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] to combine figure 1 and figure 2 Shown, the invention provides a kind of method for preparing flexible AZO film, comprises the following steps:

[0020] a) The AZO target material of the magnetron sputtering device is set as two, that is, the upper AZO target material 1a and the lower AZO target material 1b, and the two targets are arranged opposite to each other up and down, and are connected by a copper conductor 3; the upper target material 1a The upper part is provided with a first magnet N, and the lower part of the lower target 1b is provided with a second magnet S, and the first magnet N and the second magnet S form a magnetic field between the two targets, and the direction of the magnetic field is perpendicular to the target; as a preferred , the distance d1 between the two targets is 70mm;

[0021] b) Set the flexible substrate 5 on the outside of the two AZO targets, use PET with a thickness of 0.8mm as the flexible substrate, make the flexible substrate 5...

Embodiment 2

[0027] Steps a to c of this embodiment are the same as in Embodiment 1, and the steps

[0028] d) The magnetron sputtering device is fed with 30sccm argon gas, the working pressure is 0.3Pa, the power is set to 250W, and 2.21W / cm 2 The power density of the flexible substrate 5 is sputtered, and the deposition time is 4min, so that the bottom AZO film with a thickness of 65nm is grown on the flexible substrate 5;

[0029] e) Increase the power of the magnetron sputtering device to 500W at 4.42W / cm 2 The power density of the flexible substrate is sputtered, and the deposition time is 11min, so that the flexible substrate grows a layer of AZO film with a thickness of 280nm on the basis of the underlying AZO film, and the final AZO\PET film is obtained.

[0030] The AZO / PET film obtained above was subjected to transmittance test, resistivity test and XRD test respectively. The average transmittance of visible light was 83%, and the resistivity was 5.7*10 -3 Ω·cm, XRD pattern sho...

Embodiment 3

[0032] Steps a to c of this embodiment are the same as in Embodiment 1, and the steps

[0033] d) The magnetron sputtering device is passed into 30sccm argon gas, the working pressure is 0.3Pa, the power is set to 300W, and 2.65W / cm 2 The power density of the flexible substrate 5 is sputtered, and the deposition time is 4min, so that the bottom AZO film with a thickness of 80nm is grown on the flexible substrate 5;

[0034] e) Increase the power of the magnetron sputtering device to 600W at 5.30W / cm 2 The power density of the flexible substrate is sputtered, and the deposition time is 10min, so that the flexible substrate grows a layer of AZO film with a thickness of 300nm on the basis of the underlying AZO film to obtain the final AZO\PET film.

[0035] The AZO / PET film obtained above was subjected to transmittance test, resistivity test and XRD test respectively. The average transmittance of visible light was 82.7%, and the resistivity was 4.8*10 -3 Ω·cm, XRD pattern shows...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a flexible AZO thin film. The method includes the following steps that a), two AZO target materials of a magnetron sputtering device are arranged up and down oppositely, a magnet forming a magnetic field between the AZO target materials is further arranged in the magnetron sputtering device, and the direction of the magnetic field is perpendicular to the target materials; b), a flexible substrate is arranged on the outer sides of the two target materials and is perpendicular to the target materials; c), the flexible substrate is subjected to pre-sputtering; d), a bottom-layer AZO thin film is sputtered and deposited on the flexible substrate; and e), and an AZO thin film is further sputtered and deposited based on the bottom-layer AZO thin film, in the sputtering process, after secondary electrons fly out of a target surface, the secondary electrons are effectively sealed between two targets to do Lorentz movement so as to form columnar plasma, and the secondary electrons are finally deposited on the flexible substrate. Due to the fact that electron energy is very low, the temperature rise of the flexible substrate is low, ion damage to the thin film is effectively avoided, meanwhile the thin film is deposited at the room temperature, damage such as burning and deforming, caused in the traditional magnetron sputtering process, of the flexible substrate is avoided, and the quality of the thin film is ensured.

Description

technical field [0001] The invention relates to the technical field of vacuum coating, in particular to a method for preparing a flexible AZO film. Background technique [0002] AZO thin film is a kind of transparent conductive thin film, which exhibits good transparent conductive properties under proper doping concentration, and is considered to be the most likely material to replace ITO thin film. In recent years, flexible organic polymers have been used as substrates instead of traditional glass substrates to prepare AZO transparent conductive films, which have the advantages of light weight, foldable, non-fragile, convenient transportation, low cost, and easy large-scale production. They are widely used in optoelectronic devices, Liquid crystal display, solar cells, electromagnetic shielding and other fields have broad application prospects. [0003] However, when the traditional magnetron sputtering device is used for the preparation of AZO thin films, the substrate an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
CPCC23C14/352
Inventor 彭寿姚婷婷钟汝梅杨勇张宽翔蒋继文曹欣徐根保
Owner TRIUMPH PHOTOVOLTAIC MATERIAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com