Two-dimensional photonic crystal electromagnetic radiation protection device with insulator-semiconductor-insulator (ISI) structure
A technology for electromagnetic radiation protection and two-dimensional photonic crystals, which can be applied to electrical components, interference to communications, etc., and can solve the problems of emission efficiency, small power capacity, and unsatisfactory loss reduction.
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Embodiment 1
[0044] The ISI overall structure 2 described in this embodiment adopts a single-layer ISI photonic crystal structure to realize a larger forbidden band in the TE mode, and its overall structure is as follows figure 1 As shown, it includes a camouflage paint or camouflage clothing layer 1, an ISI overall structure 2 and an adhesion layer 3; the single-layer ISI photonic crystal structure 2 is composed of an upper insulator 4, a semiconductor dielectric column 5, an intermediate insulator 6 and a bottom insulator 7. The upper insulator 4, the intermediate insulator 6 and the bottom insulator 7 are all made of soft plastic with a refractive index of 1.45, and the semiconductor dielectric column 5 is used with a refractive index of 3.50 for the intrinsic semiconductor silicon; the silicon scattering elements are elliptical, and the spatial arrangement is triangular Lattice structure; in order to ensure the effect of the forbidden band, the minimum cutting unit of this structure sho...
Embodiment 2
[0048] The ISI overall structure 2 described in this embodiment adopts a double-layer ISI photonic crystal structure to realize that both the TE mode and the TM mode have larger forbidden bands, and its overall structure is as follows figure 1 As shown, it includes camouflage paint or camouflage clothing layer 1, ISI overall structure 2 and adhesion layer 3. However, the overall structure 2 of the ISI structure is composed of two single-layer ISI photonic crystal structures connected in series, such as image 3 As shown, (3-1) is a side sectional view; (3-2) is a plan view of the upper part; (3-3) is a plan view of the lower part; wherein, the upper layer ISI photonic crystal structure 8 includes an upper layer semiconductor dielectric column 10 and an upper insulator 11; the lower ISI photonic crystal structure 9 includes a lower semiconductor dielectric column 12 and a lower insulator 13. The upper layer semiconductor dielectric column 10 and the lower layer semiconductor d...
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Abstract
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