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Film layer and preparation method thereof, substrate, display device

A technology of film layer and mask plate, which is applied in the field of semiconductor manufacturing, can solve the problems of key dimension change of process layer, light intensity weakening, photoresist 5 residue, etc., to prevent DDS failure, reduce edge slope angle, and improve picture quality quality effect

Active Publication Date: 2019-11-19
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The step difference of the organic film 4 prepared by using the traditional mask plate 3 is relatively large, and the slope angle α of the edge of the formed organic film is greater than 60°, and it is easy to form an exposure dead angle at the corner 1, and the received light energy is insufficient, which leads to subsequent processes. During the process, resist 5 (PR glue) remains, such as figure 2 At the same time, at the edge of the organic film prepared by the traditional mask plate 3, due to the large step difference of the organic film 4, it is easy to cause light interference and diffraction when the photomask process is carried out, so that the light intensity is weakened. In addition, the PR glue is also slightly thicker at the edge, which leads to the subsequent process (1 st ITO&2 nd When ITO) is carried out, the PR glue 5 remains at the step difference of the organic film 4, and then the metal layer 6 partially covered by the PR glue residue cannot be removed when the etching process is carried out, and the remaining metal will conduct the adjacent signal lines of the lower layer to cause Defects such as DDS will eventually affect the picture quality, such as image 3 shown
[0005] From the above, it can be seen that the reason for PR glue residue and defects is that the slope angle of the retained organic film after exposure is too large, which makes the subsequent process exposure insufficient. In order to solve this problem, we can simply improve the process, that is, increase the exposure amount to remove the residue PR glue, but this will easily lead to changes in the key dimensions of the process layer, and the risk of subsequent failures will also increase
Therefore, technological improvement can only be used as a temporary solution

Method used

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  • Film layer and preparation method thereof, substrate, display device
  • Film layer and preparation method thereof, substrate, display device
  • Film layer and preparation method thereof, substrate, display device

Examples

Experimental program
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Embodiment 1

[0037] The preparation method of film layer of the present invention can adopt such as Figure 4 The shown edge 2 is provided with a masking plate 3 of a light transition region 9 . Preferably, the light-transmitting region 7 is a triangular notch that makes the light-shielding region 8 form a triangular protrusion. The height of the triangular notch is c, the width of the notch is d, that is, the distance between two triangular protrusions is d, wherein preferably, the distance between the light-transmitting regions is smaller than the resolution of the exposure machine. That is, it is necessary to ensure that the distance d between the two triangular protrusions is smaller than the resolution of the exposure machine. In this way, according to the size of the edge slope angle θ of the required film layer, the size of c and d is adjusted to change the light energy received by the edge of the film layer during the photomask process, such as Figure 9 As shown, the edge slope ...

Embodiment 2

[0039] Embodiment 2 is basically the same as Embodiment 1. In the film layer preparation process, a mask plate 3 provided with an optical transition area 9 is used. The main difference is that the light-transmitting area of ​​the optical transition area 9 in Embodiment 2 7 is a slit parallel to the edge 2 of the mask plate 3, such as Figure 5 As shown, the area of ​​the light-transmitting region 7 near the side of the edge of the mask 3 is greater than the area of ​​the light-shielding region 8 on the side far away from the edge of the mask 3; The area of ​​the light-shielding region 8 on the side of the edge of the mask 3 is smaller than the area of ​​the light-transmitting region 7 on the side away from the edge of the mask 3 . The width of the slit gradually decreases from the edge to the inside, and the distance between the slits is smaller than the resolution of the exposure machine. The spacing of the slits should be smaller than the resolution of the exposure machine....

Embodiment 3

[0041] Embodiment 3 is basically the same as Embodiment 1 and 2. In the film layer preparation process, a mask plate 3 provided with an optical transition region 9 is used. The main difference is that the light-transmitting region 7 in Embodiment 3 is set 9 through-holes in the optical transition zone. like Image 6As shown, the through hole can be semicircular, circular or rectangular. The diameter of the through hole gradually decreases from the edge 2 of the mask plate 3, and the area of ​​the light-transmitting region 7 near the edge side of the mask plate 3 is larger than that on the side far away from the edge of the mask plate 3 The area of ​​the light-shielding region 8; the area of ​​the light-shielding region 8 near the edge of the mask 3 is smaller than the area of ​​the light-transmitting region 7 on the side away from the edge of the mask 3. The pitch of the through holes should be smaller than the resolution of the exposure machine. By adjusting the diameter o...

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Abstract

The invention relates to a preparation method of a film layer. The film layer is etched through a mask plate with a light transition area so that the slope angle of the edge of the film layer can be 30-50 degrees. By means of the method, the slope angle of the edge of the film layer is reduced, and it is effectively avoided that due to the fact that the range difference of the film layer is large, DDS failure is caused by PR glue residues in the subsequent process. By adjusting the area of a light transmitting area, the slope angle of the edge of the film layer can be adjusted. In addition, by means of the mask plate with arc-shaped corners and seams in the corners, the light intensity of the corners is increased, exposure dead corners are omitted, the slope angle of the edge of the film layer at the corners is effectively reduced, the DDS failures caused by PR glue residues are prevented, and the image quality of a display device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a film layer and a preparation method thereof, a substrate, and a display device. Background technique [0002] Thin Film Transistor-Liquid Crystal Display (TFT-LCD for short) has the characteristics of small size, low power consumption, no radiation, and relatively low manufacturing cost, and occupies a dominant position in the current flat panel display market. A thin film transistor (Thin Film Transistor, TFT for short) array substrate is one of the important components of the TFT-LCD. In addition, thin film transistors (Thin Film Transistor, TFT) are used in such as liquid crystal display (Liquid Crystal Display, LCD), organic light emitting diode (Organic Light Emitting Diode, OLED) display, and active matrix organic light emitting diode (Active Matrix Organic Light Emitting Diode, AMOLED ) is used as a switching element in flat-panel display devices suc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/68
CPCG03F1/68
Inventor 史高飞沈奇雨赵娜王一军许徐飞
Owner BOE TECH GRP CO LTD