Fin field effect transistor manufacturing method

Abstract

The invention discloses a fin field effect transistor production method. The fin field effect transistor production method is characterized in that a substrate is provided, and is provided with fins; isolation parts are formed among the fins; the fins are provided with grid dielectric layers and dummy grids; the fins on two ends of the dummy grids are provided with source-drain areas; the dummy grids can be removed to form openings; polycrystalline silicon alternative grids can be formed by filling the openings, and can be doped. The polycrystalline silicon alternative grids can be formed again after removing the dummy grids, and by reducing the device sizes continuously, the adjusting of the threshold voltage of the polycrystalline silicon alternative grids can be carried out by adopting the doping way, and the technology is simple and feasible.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, in particular to a method for manufacturing a fin field effect transistor. Background technique [0002] With the high integration of semiconductor devices, the channel length of MOSFET continues to shorten, and a series of effects that can be ignored in the long channel model of MOSFET become more and more significant, and even become the dominant factor affecting the performance of the device. This phenomenon is collectively called short channel road effect. The short channel effect will deteriorate the electrical performance of the device, such as causing a decrease in the gate threshold voltage, an increase in power consumption, and a decrease in the signal-to-noise ratio. [0003] At present, in order to solve the problem of short channel effect, a three-dimensional device structure of fin field effect transistor (Fin-FET) is proposed. Fin-FET is a transistor with a fin channel st...

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Problems solved by technology

However, this requires the deposition of different metal gates to adjust the threshold voltage of different devices. The process is complex, especially as the device size continues to shrink, the deposition process of metal gates is extremely demanding.

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