Nano composite stacked phase-change film and preparation method and application thereof

A nano-composite and thin-film technology, applied in the field of microelectronics, can solve the problems that the thermal stability of the thin film is not very high and the thermal stability needs to be improved, and achieve the effects of improving thermal stability, high thermal stability and improving signal-to-noise ratio.

Inactive Publication Date: 2016-04-20
TONGJI UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Although there are not too many shortcomings, there are many places to be improved and improved (Seo, Jae-Hee, etc., Journal of Applied Physics, 108, 064515, 2010)
For example, Ge 2 Sb 2 Te 5 The film has only two resistance states, high and low, corresponding to logical "0" and "1", and there is room for improvement in storag

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  • Nano composite stacked phase-change film and preparation method and application thereof
  • Nano composite stacked phase-change film and preparation method and application thereof
  • Nano composite stacked phase-change film and preparation method and application thereof

Examples

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Example Embodiment

[0031] Example 1

[0032] Ge prepared in this example 2 Sb 2 Te 5 / ZnSb nanocomposite stacked phase change film with a total thickness of 50nm and a general structural formula of [Ge 2 Sb 2 Te 5 (a) / ZnSb(b)]x, the specific structure is [Ge 2 Sb 2 Te 5 (15nm) / ZnSb(35nm)] 1 、[Ge 2 Sb 2 Te 5 (25nm) / ZnSb(25nm)] 1 、[Ge 2 Sb 2 Te 5 (35nm) / ZnSb(15nm)] 1 .

[0033] 1. Clean SiO2 2 / / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:

[0034] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 15 minutes to remove dust particles and inorganic impurities on the surface of the substrate;

[0035] (b) The substrate is placed in an acetone solution, and ultrasonically cleaned for 15 minutes to remove organic impurities on the surface of the substrate;

[0036] (c) Place the substrate in deionized water, clean it ultrasonically for 15 minutes, and clean the surface again;

[0037] (d) Take out the sub...

Example Embodiment

[0078] Example 2

[0079] Nanocomposite stacked phase-change films made of Ge 2 Sb 2 Te 5 Thin films and ZnSb thin films are arranged alternately to form stacked thin film units, Ge 2 Sb 2 Te 5 The thickness of the thin film is 25nm, the thickness of the ZnSb thin film is 25nm, and they are alternately arranged to form a layer structure of stacked thin film units, and the thickness of the unit is 50nm.

[0080] The preparation method of the nanocomposite stacked phase change film adopts the following steps:

[0081] (1) cleaning SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities;

[0082] (2) Install the sputtering target, set the RF power, gas flow and sputtering pressure;

[0083] (3) Prepare Ge by room temperature magnetron sputtering method 2 Sb 2 Te 5 / ZnSb nanocomposite stacked phase change film, specifically adopt the following steps:

[0084] (3-1) Rotate the substrate to Ge 2 Sb 2 Te 5 Target, open Ge 2 Sb...

Example Embodiment

[0087] Example 3

[0088] Nanocomposite stacked phase-change films made of Ge 2 Sb 2 Te 5 Thin films and ZnSb thin films are arranged alternately to form stacked thin film units, Ge 2 Sb 2 Te 5 The thickness of the thin film is 35nm, and the thickness of the ZnSb thin film is 35nm, which are alternately arranged to form a stacked thin film unit as a layer structure. The thickness of the stacked thin film unit is 50 nm.

[0089] The preparation method of the nanocomposite stacked phase change film adopts the following steps:

[0090] (1) cleaning SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities;

[0091] (2) Install the sputtering target, set the RF power, gas flow and sputtering pressure;

[0092] (3) Prepare Ge by room temperature magnetron sputtering method 2 Sb 2 Te 5 / ZnSb nanocomposite stacked phase change film, specifically adopt the following steps:

[0093] (3-1) Rotate the substrate to Ge 2 Sb 2 Te 5 T...

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Abstract

The invention relates to a nano composite stacked phase-change film and a preparation method and an application thereof. Ge2Sb2Te5 films and ZnSb films are arranged alternately into a stacked film unit, wherein each Ge2Sb2Te5 film is 15-35nm thick, and each ZnSb film is 15-35nm thick. The stacked film unit formed by alternate arrangement is of a one-layer structure, and can be applied to a phase-change memory with multistage storage characteristic. Compared with the prior art, the nano composite stacked phase-change film has two stable phase change processes and three storage modes, and the storage density of PCRAM can be greatly improved; and the crystallization temperature and the ten-year data holding temperature are high, and the thermal stability of PCRAM can be greatly improved.

Description

technical field [0001] The invention relates to materials in the technical field of microelectronics, in particular to a nano-composite stacked phase-change film and its preparation method and application. Background technique [0002] Phase-change memory technology is a new concept memory technology that has emerged in recent years. It is a new type of non-volatile memory that uses material crystalline-amorphous state conversion to achieve information storage. It has broad application prospects and is considered the most promising. Hope to become the next generation of mainstream memory. Compared with other candidate technologies to replace flash memory in the future, PCRAM has the advantages of high reading and writing speed, high reliability, low power consumption, long life, and high cycle times, and is compatible with the COMS process (S.LaiandT. Lowrey: IEDMTech.Dig., 2000, p.243), the technical implementation difficulty and industrial cost are relatively low, and mul...

Claims

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Application Information

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IPC IPC(8): H01L45/00B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H10N70/231H10N70/881H10N70/884H10N70/021H10N70/8828
Inventor 翟继卫何子芳吴卫华
Owner TONGJI UNIV
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