Nano composite stacked phase-change film and preparation method and application thereof
A nano-composite and thin-film technology, applied in the field of microelectronics, can solve the problems that the thermal stability of the thin film is not very high and the thermal stability needs to be improved, and achieve the effects of improving thermal stability, high thermal stability and improving signal-to-noise ratio.
Inactive Publication Date: 2016-04-20
TONGJI UNIV
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The invention relates to a nano composite stacked phase-change film and a preparation method and an application thereof. Ge2Sb2Te5 films and ZnSb films are arranged alternately into a stacked film unit, wherein each Ge2Sb2Te5 film is 15-35nm thick, and each ZnSb film is 15-35nm thick. The stacked film unit formed by alternate arrangement is of a one-layer structure, and can be applied to a phase-change memory with multistage storage characteristic. Compared with the prior art, the nano composite stacked phase-change film has two stable phase change processes and three storage modes, and the storage density of PCRAM can be greatly improved; and the crystallization temperature and the ten-year data holding temperature are high, and the thermal stability of PCRAM can be greatly improved.
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Property | Measurement | Unit |
Thickness | 15.0 ~ 35.0 | nm |
Thickness | 25.0 ~ 35.0 | nm |
Thickness | 50.0 ~ 70.0 | nm |
tensile | MPa | |
Particle size | Pa | |
strength | 10 |
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